DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD353
Schottky barrier double diode
Product data sheet
Supersedes data of 1999 May 25
2001 Oct 15
NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
•
Low forward voltage
•
Small SMD package
•
Low capacitance.
APPLICATIONS
•
UHF mixer
•
Sampling circuits
•
Modulators
•
Phase detection.
handbook, 2 columns
PMBD353
PINNING
MARKING
CODE
(1)
∗4F
PIN
1
2
3
DESCRIPTION
cathode k
1
anode a
2
common connection a
1
, k
2
MARKING
TYPE NUMBER
PMBD353
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
3
handbook, 2 columns
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
1
Top view
3
2
MGC487
1
2
MGC421
Fig.1
Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
−
−
−65
−
4
30
+150
100
V
mA
°C
°C
PARAMETER
MIN.
MAX.
UNIT
2001 Oct 15
2
NXP Semiconductors
Product data sheet
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
reverse current
diode capacitance
V
R
= 3 V; note 1; see Fig.3
f = 1 MHz; V
R
= 0; see Fig.4
PARAMETER
CONDITIONS
PMBD353
MAX.
UNIT
350
450
600
0.25
1
mV
mV
mV
μA
pF
VALUE
500
UNIT
K/W
2001 Oct 15
3
NXP Semiconductors
Product data sheet
Schottky barrier double diode
GRAPHICAL DATA
10
2
handbook, halfpage
IF
(mA)
10
MLC795
PMBD353
handbook, halfpage
10
4
MLC796
IR
(nA)
10
3
(1)
(1)
10
2
(2)
(3)
1
(2)
(3)
(4)
10
(4)
1
10
−1
10
−2
0
200
400
600
VF (mV)
800
10
1
0
1
2
V R (V)
3
(1)
(2)
(3)
(4)
T
amb
= 100
°C.
T
amb
= 60
°C.
T
amb
= 25
°C.
T
amb
=
−40 °C.
(1) T
amb
= 100
°C.
(2) T
amb
= 60
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
MLC797
handbook, halfpage
0.8
Cd
(pF)
0.7
0.6
0.5
0.4
0
1
2
3
V R (V) 4
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2001 Oct 15
4
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PACKAGE OUTLINE
PMBD353
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Oct 15
5
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