CREAT BY ART
MBRF10H100CT - MBRF10H200CT
10.0AMPS Isolated Schottky Barrier Rectifiers
ITO-220AB
Features
UL Recognized File # E-326243
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds/.25", (6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: ITO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.73 grams
Ordering Information (example)
Part No.
Package
Packing
Packing code
C0
Packing code
(Green)
C0G
MBRF10H100CT ITO-220AB 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Surge Current
(Rated V
R
, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, T
A
=25℃
IF=5A, T
A
=125℃
IF=10A, T
A
=25℃
IF=10A, T
A
=125℃
Maximum Reverse Current @ Rated V
R
Voltage Rate of Change,(Rated V
R
)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
T
A
=25
℃
T
A
=125
℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
MBRF
10H100CT
100
70
100
MBRF
10H150CT
150
105
150
10
10
120
1
MBRF
10H200CT
200
140
200
Unit
V
V
V
A
A
A
0.5
0.88
0.75
0.97
0.85
5
1
10000
3.5
- 65 to + 175
- 65 to + 175
A
0.85
V
F
0.75
0.95
0.85
I
R
dV/dt
R
θjC
T
J
T
STG
V
uA
mA
V/us
O
C/W
O
O
C
C
Version:F12
RATINGS AND CHARACTERISTIC CURVES (MBRF10H100CT THRU MBRF10H200CT)
FIG.1 FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
12
AVERAGE FORWARD
A
CURRENT (A)
10
8
6
4
2
0
50 60 70 80 90 100 110 120 130 140 150 160 170 180
CASE TEMPERATURE
(
o
C)
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
180
150
120
90
60
30
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (mA)
100
TA=125℃
10
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
1
TA=125℃
10
0.1
TA=75℃
1
TA=25℃
0.01
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FORWARD VOLTAGE (V)
0.001
TA=25℃
0.0001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
900
800
700
600
500
400
300
200
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
TRANSIENT THERMAL
IMPEDANCE(℃/W)
10
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
Version:F12
PCB Design
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