DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BYM36 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 30
1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
DESCRIPTION
BYM36 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36F
BYM36G
V
R
continuous reverse voltage
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36F
BYM36G
I
F(AV)
average forward current
BYM36A to C
BYM36D and E
BYM36F and G
I
F(AV)
average forward current
BYM36A to C
BYM36D and E
BYM36F and G
,
a
MAM104
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
3.0
2.9
2.9
1.25
1.20
1.15
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
UNIT
T
tp
= 55
°C;
lead length = 10 mm;
see Figs 2; 3 and 4
averaged over any 20 ms period;
see also Figs 14; 15 and 16
T
amb
= 65
°C;
PCB mounting (see
Fig.25); see Figs 5; 6 and 7
averaged over any 20 ms period;
see also Figs 14; 15 and 16
−
−
−
−
−
−
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYM36A to C
BYM36D and E
BYM36F and G
I
FRM
repetitive peak forward current
BYM36A to C
BYM36D and E
BYM36F and G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Figs 17 and 18
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
T
amb
= 65
°C;
see Figs 11; 12 and 13
−
−
−
−
−
CONDITIONS
T
tp
= 55
°C;
see Figs 8; 9 and 10
−
−
−
BYM36 series
MIN.
MAX.
37
33
27
13
11
10
65
10
+175
+175
A
A
A
A
A
A
A
UNIT
mJ
°C
°C
−65
−65
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYM36A to C
BYM36D and E
BYM36F and G
V
F
forward voltage
BYM36A to C
BYM36D and E
BYM36F and G
V
(BR)R
reverse avalanche breakdown
voltage
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36F
BYM36G
I
R
reverse current
V
R
= V
RRMmax
; see Fig.22
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.22
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
µA
µA
I
F
= 3 A;
see Figs 19; 20 and 21
CONDITIONS
I
F
= 3 A; T
j
= T
j max
;
see Figs 19; 20 and 21
MIN.
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
MAX.
1.22
1.28
1.24
1.60
1.78
1.57
V
V
V
V
V
V
UNIT
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
t
rr
PARAMETER
reverse recovery time
BYM36A to C
BYM36D and E
BYM36F and G
C
d
diode capacitance
BYM36A to C
BYM36D and E
BYM36F and G
dI
R
--------
dt
maximum slope of reverse recovery when switched from
I
F
= 1 A to V
R
≥
30 V and
current
dI
F
/dt =
−1
A/µs;
BYM36A to C
see Fig.27
BYM36D and E
BYM36F and G
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
f = 1 MHz; V
R
= 0 V;
see Figs 23 and 24
CONDITIONS
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig. 26
MIN.
−
−
−
−
−
−
BYM36 series
TYP.
−
−
−
85
75
65
MAX.
100
150
250
−
−
−
UNIT
ns
ns
ns
pF
pF
pF
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
VALUE
25
75
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.25.
For more information please refer to the
“General Part of associated Handbook”.
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
3
MSA884
BYM36 series
handbook, halfpage
handbook, halfpage
3
MSA885
I F(AV)
(A)
2
20 15
10 lead length (mm)
I F(AV)
(A)
2
20
15
10 lead length (mm)
1
1
0
0
BYM36A to C
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
0
0
BYM36D and E
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
Fig.2
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
4.0
MBD418
2.0
I F(AV)
(A)
1.6
MLB492
I F(AV)
(A)
3.2
lead length 10 mm
2.4
1.2
1.6
0.8
0.8
0.4
0
0
100
Ttp ( C)
o
0
200
0
100
T amb ( C)
o
200
BYM36F and G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
BYM36A to C
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.25.
Switched mode application.
Fig.4
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 Sep 18
5
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