BLF245
RF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The
ASI BLF245
is a vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
FEATURES INCLUDE:
•
P
G
= 13 dB Typical at 175 MHz
•
30:1
Load VSWR Capability
•
Omnigold™
metalization system
PACKAGE STYLE .380 4L FLG
MAXIMUM RATINGS
I
D
V
DS
V
GS
P
DISS
T
J
T
STG
θ
JC
6.0 A
65 V
±20
V
68 W @ T
C
= 25 °C
-65 °C to +150 °C
-65 °C to +200 °C
1.8 °C/W
1 = DRAIN
2 = GATE
3&4 = SOURCE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
η
D
ψ
I
D
= 10 mA
V
DS
= 28 V
V
DS
= 0 V
V
DS
= 10 V
V
DS
= 10 V
V
DS
= 28 V
V
DS
= 28 V
NONE
T
C
= 25 °C
TEST CONDITIONS
V
GS
= 0 V
V
GS
=
±20
V
I
D
= 10 mA
I
D
= 1.5 A
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 30 W
f = 150 MHz
MINIMUM
65
TYPICAL MAXIMUM
2.0
1.0
UNITS
V
mA
µ
A
V
S
pF
dB
%
2.0
1.2
1.9
125
75
7.0
13
50
16
60
4.5
V
SWR
= 30:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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