PESD3V3L1UA; PESD3V3L1UB;
PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 17 June 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from
the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD3V3L1UA
PESD3V3L1UB
PESD3V3L1UL
SOD323
SOD523
SOD882
JEITA
SC-76
SC-79
-
very small
ultra small and flat lead
leadless ultra small
Package configuration
Type number
1.2 Features
I
Unidirectional ESD protection of
one line
I
Low diode capacitance: C
d
= 34 pF
I
Low clamping voltage: V
CL
= 11 V
I
Very low leakage current: I
RM
= 100 nA
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
AEC-Q101 qualified
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Subscriber Identity Module (SIM) card
protection
I
Portable electronics
I
FireWire
I
High-speed data lines
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
34
Max
3.3
40
Unit
V
pF
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
PESD3V3L1UA; PESD3V3L1UB
1
001aab540
2
1
2
006aaa152
PESD3V3L1UL
1
2
cathode
anode
[1]
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD3V3L1UA
PESD3V3L1UB
PESD3V3L1UL
SC-76
SC-79
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD323
SOD523
SOD882
Type number
4. Marking
Table 5.
Marking codes
Marking code
1H
Z7
XW
Type number
PESD3V3L1UA
PESD3V3L1UB
PESD3V3L1UL
PESD3V3L1UA_UB_UL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 June 2009
2 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
−55
−65
Max
45
4.5
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
-
Max
30
400
10
Unit
kV
V
kV
Table 8.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD3V3L1UA_UB_UL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 June 2009
3 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
BR
C
d
V
CL
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PP
= 4.5 A
r
dif
V
F
[1]
[2]
Conditions
V
RWM
= 3.3 V
I
R
= 5 mA
f = 1 MHz;
V
R
= 0 V
[1][2]
Min
-
-
5.3
-
Typ
-
100
5.6
34
Max
3.3
300
6.0
40
Unit
V
nA
V
pF
-
-
-
-
-
-
-
-
8
11
30
1.2
V
V
Ω
V
differential resistance
forward voltage
I
R
= 5 mA
I
F
= 200 mA
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
PESD3V3L1UA_UB_UL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 June 2009
4 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
I
35
C
d
(pF)
30
006aab563
25
−V
CL
−V
BR
−V
RWM
−I
RM
−I
R
V
20
−
15
P-N
+
10
0
1
2
3
4
V
R
(V)
5
−I
PP
006aaa407
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a unidirectional
ESD protection diode
PESD3V3L1UA_UB_UL_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 June 2009
5 of 13
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