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BFR93AR,215

Description
transistors RF bipolar tape7 tns-rfss
CategoryDiscrete semiconductor    The transistor   
File Size80KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BFR93AR,215 Overview

transistors RF bipolar tape7 tns-rfss

BFR93AR,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-236
package instructionPLASTIC, 3 PIN
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.6 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandC BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
Base Number Matches1
BFR93AR
NPN 6 GHz wideband transistor
Rev. 01 — 30 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN wideband transistor in a plastic SOT23 package.
PNP complement: BFT93.
1.2 Features
I
Very high power gain
I
Low noise figure
I
Very low intermodulation distortion
1.3 Applications
I
RF wideband amplifiers and oscillators
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
Quick reference data
Conditions
open emitter
Min
-
-
-
T
sp
95
°C
I
C
= 0 mA; V
CE
= 5 V; f = 1 MHz;
I
C
= 30 mA; V
CE
= 5 V;
f = 500 MHz;
I
C
= 30 mA; V
CE
= 8 V;
T
amb
= 25
°C
f = 1 GHz
f = 2 GHz
NF
V
O
noise figure
output voltage
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
Γ
S
=
Γ
opt
; T
amb
= 25
°C
IMD =
−60
dB; I
C
= 30 mA;
V
CE
= 8 V; R
L
= 75
Ω;
T
amb
= 25
°C;
f
p
+
f
q
f
r
= 793.25 MHz
-
-
-
-
13
7
1.9
425
-
-
-
-
dB
dB
dB
mV
-
-
-
Typ
-
-
-
-
0.6
6
Max
15
12
35
300
-
-
Unit
V
V
mA
mW
pF
GHz
collector-base voltage
collector current
total power dissipation
feedback capacitance
transition frequency
unilateral power gain
Symbol Parameter
collector-emitter voltage open base
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