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BLV33

Description
transistors RF bipolar RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size38KB,3 Pages
ManufacturerAll Sensors
Environmental Compliance
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BLV33 Overview

transistors RF bipolar RF transistor

BLV33 Parametric

Parameter NameAttribute value
ManufactureAdvanced Semiconductor, Inc.
Product CategoryTransistors RF Bipol
RoHSYes
TypeRF Bipolar Powe
Transistor PolarityNPN
DC Collector/Base Gain hfe Mi15
Maximum Operating Frequency224 MHz
Collector- Emitter Voltage VCEO Max33 V
Emitter- Base Voltage VEBO4 V
Continuous Collector Curre12.5 A
Maximum Operating Temperature+ 200 C
Power Dissipati132 W
Mounting StyleThrough Hole
Package / CaseSOT-147
PackagingTray
Maximum DC Collector Curre20 A
Minimum Operating Temperature- 65 C
BLV33
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLV33
is a Common Emitter
Device Designed for Class A
Television Applications.
PACKAGE STYLE .500 4L STUD
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CESM
V
CEO
P
DISS
T
J
T
STG
θ
JC
12.5 A
65 V
33 V
132 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.5 °C/W
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
ORDER CODE: ASI10498
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
c
C
re
C
cs
f
T
G
P
T
C
= 25°C
TEST CONDITIONS
I
C
= 100 mA
I
C
= 25 mA
I
E
= 10 mA
V
CE
= 30 V
V
CE
= 25 V
V
CB
= 25 V
V
CE
= 25 V
V
CE
= 25 V
V
CB
= 25 V
V
CB
= 25 V
V
CE
= 25 V
f = 224.25 MHz
I
C
= 100 mA
I
C
= 100 mA
I
E
= 3.0 A
I
E
= 6.0 A
I
C
= 3.2 A
P
out
= 19 W
I
C
= 3.0 A
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
33
65
4.0
10
15
155
88
3.0
680
750
9.0
9.7
100
UNITS
V
V
V
mA
---
pF
MHz
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/3

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