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BSC160N10NS3 G

Description
mosFET N-kanal power mos
Categorysemiconductor    Discrete semiconductor   
File Size543KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSC160N10NS3 G Overview

mosFET N-kanal power mos

BSC160N10NS3 G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre8.8 A
Rds On - Drain-Source Resistance16 mOhms
ConfiguratiSingle Quad Drain Triple Source
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati60 W
Mounting StyleSMD/SMT
Package / CaseTDSON-8
PackagingReel
Channel ModeEnhanceme
Fall Time5 ns
Minimum Operating Temperature- 55 C
Rise Time15 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time22 ns
Type
BSC160N10NS3 G
$(*'#$%
3 Power-Transistor
TM
Product Summary
V
DS
100
16
42
V
m#
A
9 .1 ) $ & /$ # $ # # - ,3% / - ,
) 7% -
+
0)
9 # (!,,% * ,- / !** 3% *

+
%
9 5 % *% ,1'!1 # (!/ 5
R
DS(on)
product (FOM)
# *
%
'%
9 % / * 4 - , / 0) !,# %
R
DS(on)
6-
% 01
9  8 - .% / ) 1 + .% / 2 /

!1 %
,'
!1 %
9 " & % % * !$ .* )  -   # - + .*!,1
/ %
!1
,'
)
9 2 !*&% $ !# # - / ) 1     
))
$ ,' -
1)
R
DS(on),max
I
D
PG-TDSON-8
for target application
9 !* '% , & % % !# # - / ) 1   



-
/
$ ,' -
Type
BSC160N10NS3 G
Package
PG-TDSON-8
Marking
160N10NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=33 A,
R
GS
=25
#
Value
42
27
8.8
168
50
±20
60
-55 ... 150
55/150/56
mJ
V
W
°C
Unit
A
Rev. 2.4
page 1
2009-10-30

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