BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
SOD-323F
B
Features
Wide zener voltage range selection : 2.4V to 75V
V
Z
Tolerance Selection of ±2%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Unit (mm)
Min
1.15
2.30
0.25
1.60
0.80
0.05
Max
1.35
2.70
0.40
1.80
1.00
0.20
Unit (inch)
Min
0.091
0.010
Max
0.106
0.016
0.045 0.053
Mechanical Data
Case : Flat lead SOD-323 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.02±0.5 mg
Dimensions
A
B
C
D
E
F
0.063 0.071
0.031 0.039
0.002 0.008
Ordering Information
Part No.
BZT52BxxS RR
Package
SOD-323F
Packing
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
I
F
=10mA
(Note 1)
Symbol
P
D
V
F
RθJA
T
J
, T
STG
Value
200
1
625
-65 to + 150
Units
mW
V
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Current
I
F
V
ZM
V
Z
V
BR
V
R
I
R
I
ZK
V
F
Voltage
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
Forward Region
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
I
ZT
I
ZM
BreakdownRegion
Leakage Region
I
ZM
V
ZM
Version : B09
C11
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Volatge = 1 V Maximum @ IF = 10mA for all part numbers
Part Number
BZT52B2V4S
BZT52B2V7S
BZT52B3V0S
BZT52B3V3S
BZT52B3V6S
BZT52B3V9S
BZT52B4V3S
BZT52B4V7S
BZT52B5V1S
BZT52B5V6S
BZT52B6V2S
BZT52B6V8S
BZT52B7V5S
BZT52B8V2S
BZT52B9V1S
BZT52B10S
BZT52B11S
BZT52B12S
BZT52B13S
BZT52B15S
BZT52B16S
BZT52B18S
BZT52B20S
BZT52B22S
BZT52B24S
BZT52B27S
BZT52B30S
BZT52B33S
BZT52B36S
BZT52B39S
BZT52B43S
BZT52B47S
BZT52B51S
BZT52B56S
BZT52B62S
BZT52B68S
BZT52B75S
Device
Marking
0Z
1Z
2Z
3Z
4Z
5Z
6Z
7Z
8Z
9Z
AZ
BZ
CZ
DZ
EZ
FZ
GZ
HZ
JZ
KZ
LZ
MZ
NZ
PZ
RZ
SZ
TZ
UZ
VZ
WZ
XZ
YZ
－Z
＝Z
≡Z
＞Z
＜Z
V
Z
@ I
ZT
(Volt)
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Nom
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
39.00
43.00
47.00
51.00
56.00
62.00
68.00
75.00
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Z
ZT
@ I
ZT
(Ω)
Z
ZK
@ I
ZK
(Ω) I
R
@ V
R
(μA)
I
ZK
(mA)
V
R
(V)
Max
Max
Max
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
1
1
1
1
1
1
1
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
Notes:
1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of
±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest
Taiwan semiconductor
representative.
4. The Zener impedance is derived from the 60-cycle ac volatge, which results when an ac current having an
rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Version :
C11
B10
BZT52B2V4S-BZT52B75S
200mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1000
100
FIG 2 Zener Breakdown Characteristics
Ta=25°C
10
Forward Current (mA)
100
Zener Current (mA)
1
1.1
1.2
Ta=25°C
10
1
0
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
0.01
0
0
1
2
3
4
5
6
7
8
9
10
11
12
Forward Voltage (V)
Zener Voltage (V)
FIG 3 Zener Breakdown Characteristics
100
300
FIG 4 Admissible Power Disspation Curve
Power Dissipation (mW)
250
200
150
100
50
0
Zener Current (mA)
10
1
0
0
15
25
35
45
55
65
75
0
50
100
150
200
Zener Voltage (V)
Ambient Tempeture (°C)
FIG 5 Typical Capacitance
Dynamic Impedence (Ώ)
1000
1000
FIG 6 Effect of Zener Voltage on Impedence
Iz=1mA
Capacitance(pF)
100
1V Bias
100
Iz=5mA
Ta=150°C
10
Bias at 50% of VZ(Nom)
10
Iz=20m
1
Ta=25°C
1
1
10
100
1
10
100
Zener Voltage (V)
Zener Voltage (V)
Version :
C11
B09
MCU
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