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3KP8.5C

Description
tvs diodes - transient voltage suppressors tvs diode 3kp axial
CategoryDiscrete semiconductor    diode   
File Size648KB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

3KP8.5C Overview

tvs diodes - transient voltage suppressors tvs diode 3kp axial

3KP8.5C Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerLittelfuse
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage10.4 V
Minimum breakdown voltage9.44 V
Breakdown voltage nominal value9.92 V
Shell connectionISOLATED
Maximum clamping voltage14.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum power dissipation7 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage8.5 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperature40
Transient Voltage Suppression Diodes
Axial Leaded – 3000W > 3KP series
3KP Series
Description
Uni-directional
RoHS
The 3KP Series is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Bi-directional
Features
• Typical maximum
temperature coefficient
ΔV
BR
= 0.1% × V
BR
@25°C
× ΔT
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25°C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation by
10x1000μs Test Waveform (Fig.2)
(Note 1)
Steady State Power Dissipation on
Inifinite Heat Sink at T
L
=75ºC (Fig. 6)
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
Only (Note 2)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only (Note 3)
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
3000
7
.0
300
3.5/5.0
-55 to 175
8.0
40
Unit
W
W
A
V
°C
°C/W
°C/W
• Glass passivated chip
junction in P600 package
• 3000W peak pulse
capability at 10×1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0 Volts to BV min
• Excellent clamping
capability
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
15kV(Air), 8kV (Contact)
Applications
• ESD protection of data
lines in accordance with
IEC 61000-4-2 (IEC801-2)
• EFT protection of data
lines in accordance with
IEC 61000-4-4 (IEC801-4)
• Low incremental surge
resistance
• Typical I
R
less than 2μA
above 12V
• High temperature
soldering guaranteed:
260°C/40 seconds /
0.375” (9.5mm) lead
,
length, 5 lbs., (2.3kg)
tension
• Plastic package has
underwriters laboratory
flammability classification
94V-O
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
TVS devices are ideal for the protection of I/O interfaces,
V
CC
bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
A
= 25°C per Fig. 3.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
_
_
3. V
F
<3.5V for devices of V
BR
<
200V and V
F
<5.0V for devices of V
BR
>
201V.
Functional Diagram
Bi-directional
Cathode
Uni-directional
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 03/04/13
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