BLW50F datasheet, PDF - EEWORLD Datasheet

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BLW50F: Descriptiontransistors RF bipolar RF transistor; Categorysemiconductor Discrete semiconductor; File Size31KB，2 Pages; ManufacturerAll Sensors; Environmental Compliance

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transistors RF bipolar RF transistor

BLW50F Parametric

Parameter Name	Attribute value
Manufacture	Advanced Semiconductor, Inc.
Product Category	Transistors RF Bipol
RoHS	Yes
Type	RF Bipolar Powe
Transistor Polarity	NPN
DC Collector/Base Gain hfe Mi	19
Maximum Operating Frequency	30 MHz
Collector- Emitter Voltage VCEO Max	55 V
Emitter- Base Voltage VEBO	4 V
Continuous Collector Curre	3.25 A
Maximum Operating Temperature	+ 200 C
Power Dissipati	87 W
Mounting Style	Screw
Package / Case	SOT-123
Packaging	Tray
Maximum DC Collector Curre	7.5 A
Minimum Operating Temperature	- 65 C

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BLW50F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI BLW50F

is Designed for

use in transmitters in the HF and VHF

band applications up tp 30 MHz.

PACKAGE STYLE .500 4L FLG

FEATURES:

•

P

G

= 14 dB min. at 75 W/30 MHz

•

IMD

3

= 50 dBc max. at 75 W

(PEP)

•

Omnigold™

Metalization System

MAXIMUM RATINGS

I

C

V

CBO

V

CEO

V

EBO

P

DISS

T

J

T

STG

θ

JC

3.25 A

110 V

55 V

4.0 V

87 W @ T

C

= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

2.0 °C/W

1 = COLLECTOR 2 = BASE

3 & 4 = EMITTER

ORDER CODE: ASI10834

O

CHARACTERISTICS

SYMBOL

BV

CES

BV

CE0

BV

EBO

I

CES

h

FE

C

ob

G

P

IMD

3

η

C

T

C

= 25 C

NONETEST

CONDITIONS

I

C

= 100 mA

I

C

= 200 mA

I

E

= 10 mA

V

CE

= 55 V

V

CE

= 6.0 V

V

CB

= 50 V

I

C

= 1.4 A

f = 1.0 MHz

MINIMUM TYPICAL MAXIMUM

110

55

4.0

10

19

---

50

100

14

---

37

---

-30

UNITS

V

mA

---

pF

dB

dBc

%

V

CE

= 50 V

P

OUT

= 75 W

(PEP)

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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