2SK3757
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 1.9
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 1.0 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 450 V)
Enhancement model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AR
I
AR
E
AR
T
ch
T
stg
Rating
450
450
±30
2
5
30
103
2
3
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
−
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
4.17
62.5
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
42.8 mH, R
G
=
25
Ω,
I
AR
=
2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
3
1
2009-09-29
2SK3757
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Gate -source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
10 V
0V
50
Ω
I
D
=
1 A
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
G
= ±10 μA,
V
DS
=
0 V
V
DS
=
450 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
1 A
V
DS
=
10 V, I
D
=
1 A
Min
⎯
±30
⎯
450
2.0
⎯
0.28
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
1.9
1.0
330
4
45
15
Max
±10
⎯
100
⎯
4.0
2.45
⎯
⎯
⎯
pF
Unit
μA
V
μA
V
V
Ω
S
⎯
⎯
V
OUT
⎯
⎯
⎯
ns
V
GS
Turn-on time
Switching time
Fall time
t
f
t
on
⎯
R
L
=
200
Ω
25
⎯
Duty
<
1%, t
w
=
10
μs
=
V
DD
∼
200 V
−
⎯
⎯
V
DD
∼
360 V, V
GS
=
10 V, I
D
=
2 A
−
⎯
⎯
20
⎯
⎯
⎯
⎯
⎯
nC
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
off
Q
g
Q
gs
Q
gd
80
9
5
4
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
2 A, V
GS
=
0 V
I
DR
=
2 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1000
5.0
Max
2
5
−1.5
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3757
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
2SK3757
I
D
– V
DS
2
COMMON
SOURCE
T
Ｃ
= 25℃
PULSE TEST
I
D
– V
DS
5
6.0
10
8.0
7.25
7.0
6.75
COMMON
SOURCE
T
Ｃ
= 25℃
PULSE TEST
8.0
DRAIN CURRENT I
D
(A)
5.75
10
DRAIN CURRENT I
D
(A)
1.6
4
1.2
5.5
3
6.5
0.8
5.25
5.0
2
6.0
5.5
0.4
V
ＧＳ
= 4.5V
1
V
ＧＳ
= 5.0V
0
0
2
4
6
8
DRAIN−SOURCE VOLTAGE V
DS
(V)
10
0
0
10
20
30
40
DRAIN−SOURCE VOLTAGE V
DS
(V)
50
I
D
– V
GS
5
DRAIN−SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
V
ＤＳ
= 20V
PULSE TEST
V
DS
– V
GS
10
COMMON SOURCE
T
Ｃ
= 25℃
PULSE TEST
DRAIN CURRENT I
D
(A)
4
8
3
6
I
Ｄ
= 2.0A
2
100
25
4
1.0
1
T
Ｃ
= -55℃
2
0.5
0
0
2
4
6
8
GATE−SOURCE VOLTAGE V
GS
(V)
10
0
0
4
8
12
16
20
GATE−SOURCE VOLTAGE V
GS
(V)
⎪Y
fs
⎪
– I
D
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
R
DS (ON)
– I
D
30
10.0
DRAIN−SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
V
ＤＳ
= 20V
PULSE TEST
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
T
Ｃ
= -55℃
25
100
5
3
1.0
VGS
=
10, 15 V
1
0.1
0.1
1
DRAIN CURRENT I
D
(A)
10
0.5
0.1
0.3
0.5
1
3
5
10
DRAIN CURRENT I
D
(A)
3
2009-09-29
2SK3757
R
DS (ON)
– Tc
10
I
DR
– V
DS
10
DRAIN REVERSE CURRENT I
DR
(A)
DRAIN−SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
VGS
=
10 V
PULSE TEST
8
3
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
6
ID
=
2 A
4
1.0
0.3
10
3
0.03
1
0.01
VGS
=
0,
−1
V
0.5
0.1
2
0
−80
−40
0
40
80
120
160
0
−0.2
−0.4
−0.6
−0.8
−1.0
CASE TEMPERATURE
Tc
(°C)
DRAIN−SOURCE VOLTAGE V
DS
(V)
1000
CAPACITANCE – V
DS
5
Ciss
V
th
– Tc
V
th
(V)
COMMON SOURCE
VDS
=
10 V
ID
=
1 mA
PULSE TEST
4
(pF)
100
Coss
GATE THRESHOLD VOLTAGE
CAPACITANCE C
3
2
10
COMMON SOURCE
V
ＧＳ
= 0V
f = 1MHz
Tc = 25℃
1
0.1
1
10
100
Crss
1
0
−80
−40
0
40
80
120
160
DRAIN−SOURCE VOLTAGE V
DS
(V)
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
50
500
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
DRAIN−SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
ID
=
2 A
Tc
=
25°C
PULSE TEST
VDS
300
90
200
VDS
=
360 V
VGS
8
180
12
20
P
D
(W)
DRAIN POWER DISSIPATION
30
20
10
100
4
0
0
40
80
120
160
200
0
0
2
4
6
8
10
12
0
14
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
GATE−SOURCE VOLTAGE V
GS
40
400
16
(V)
2SK3757
r
th
– t
w
3
NORMALIZED TRANSIENT THERMAL IMPEDANCE
r
th (t)
/R
th (ch-c)
1
Duty
=
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
t
0.01
0.01
SINGLE PULSE
T
Duty
=
t/T
Rth (ch-c)
=
4.17°C/W
0.003
10
μ
100
μ
1m
10 m
100 m
1
10
PDM
PULSE WIDTH t
w
(S)
SAFE OPERATING AREA
10
200
ID max (PULSE)
*
100
μs
*
3
ID max (CONTINUOUS)
1 ms
*
E
AS
– T
ch
AVALANCHE ENERGY EAS (mJ)
160
DRAIN CURRENT ID (A)
120
1
80
0.3
DC OPERATION
Tc
=
25°C
40
0.1
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
0.03
*
SINGLE NONPETITIVE PULSE
Tc
=
25°C
Curves must be derated linearly with VDSS max
increase in temperature
0.01
1
10
100
1000
T
ch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
DRAIN−SOURCE VOLTAGE V
DS
(V)
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
42.8 mH
WAVE FORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2009-09-29
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