PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes
in SOT23
Rev. 02 — 25 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two
signal lines from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
ESD protection of two lines
Max. peak pulse power: P
PP
= 350 W
Low clamping voltage: V
CL
= 26 V
Small SMD plastic package
I
I
I
I
Ultra low leakage current: I
RM
< 90 nA
ESD protection up to 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 15 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse standoff voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
C
d
diode capacitance
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
V
R
= 0 V;
f = 1 MHz
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode 1
cathode 2
double cathode
1
2
2
006aaa155
Simplified outline
3
Symbol
1
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
V3*
V4*
V5*
V6*
V7*
Type number
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
2 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
Parameter
peak pulse power
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
I
PP
peak pulse current
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
T
j
T
amb
T
stg
[1]
[2]
Conditions
t
p
= 8/20
µs
[1][2]
Min
-
-
-
-
-
Max
350
350
200
200
200
15
13
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
t
p
= 8/20
µs
[1][2]
-
-
-
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
Table 6.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge
voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
PESDxL2BT series
HBM MIL-STD883
-
-
23
10
kV
kV
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
Max
Unit
-
30
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 3 or 2 to 3.
Table 7.
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
ESD Standard
IEC 61000-4-2, level 4 (ESD)
HBM MIL-STD883, class 3
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
3 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
4 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
I
RM
reverse leakage current
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
V
BR
breakdown voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
C
d
diode capacitance
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
V
CL
clamping voltage
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
I
PP
= 1 A
I
PP
= 15 A
I
PP
= 1 A
I
PP
= 13 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
[1][2]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.09
0.01
<1
<1
<1
6.4
7.6
15.8
18.8
27.8
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
Unit
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
-
-
-
-
-
5.8
7.0
14.2
17.1
25.4
V
R
= 0 V;
f = 1 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
26
10
28
20
37
25
44
40
70
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
PESDXL2BT_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 25 August 2009
5 of 14
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