FGAF40N60UFD
IGBT
FGAF40N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.3 V @ I
C
= 20A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3PF
G C E
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGAF40N60UFD
600
±
20
40
20
160
15
160
100
40
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
1.2
2.6
40
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
FGAF40N60UFD
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 20mA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
I
C
= 40A
,
V
GE
= 15V
3.5
--
--
5.1
2.3
3.1
6.5
3.0
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1075
170
50
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
65
35
470
130
600
30
37
110
80
500
310
810
77
20
25
14
--
--
130
100
--
--
1000
--
--
200
250
--
--
1200
150
30
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CE
= 300 V, I
C
= 20A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 15A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 15A,
di/dt = 200A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.4
1.3
50
74
4.5
6.5
80
220
Max.
1.7
--
95
--
6.0
--
180
--
Units
V
ns
A
nC
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
FGAF40N60UFD
160
Common Emitter
Tc = 25℃
120
20V
80
70
Common Emitter
V
GE
=15V
Tc= 25℃
Tc= 125℃
Collector Current , Ic (A)
8
15V
Collector Current, I
c
(A)
60
50
40
30
20
10
80
12V
V
GE
= 10V
40
0
0
2
4
6
0
0.5
1
10
Collector-Emitter Voltage,V
CE
(V)
Collector-Emitter Voltage, V
CE
(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
30
Vcc = 300V
Load Current : peak of square wave
25
4
Common Emitter
Vge=15V
Collector - Emitter Voltage, V
CE
[V]
3
40A
2
20A
Ic=10A
Load Current [A]
20
15
10
1
5
0
0
30
60
90
120
150
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 24W
0.1
1
10
100
1000
0
Case Temperature, T
C
[
℃
]
Frequency [kHz]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
20
[V]
CE
Collector - Emitter Voltage, V
12
Collector - Emitter Voltage, V
CE
16
[V]
Common Emitter
T
C
= 25℃
Common Emitter
T
C
= 125℃
16
12
8
40A
8
40A
4
Ic=10A
0
20A
4
I
C
= 10A
0
0
4
8
20A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2004 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FGAF40N60UFD Rev. A
FGAF40N60UFD
3000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
300
Common Emitter
Vcc=300V,V
GE
=
±
15V
Ic=20A
Tc = 25
℃
Tc = 125
℃
- - - -
Ton
2500
Switching Time (ns)
Capacitance (pF)
2000
Coes
100
Tr
1500
1000
Cres
500
0
1
10
30
10
1
10
100
200
Collector-Emitter Voltage, V
CE
(V)
Gate Resistance, R
G
(
Ω
)
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
Vcc=300V,V
GE
=
±
15V
Ic=20A
Tc = 25℃
Tc = 125℃
2000
Common Emitter
Vcc=300V,V
GE
=± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
1000
Switching Time (ns)
Switching Time (uJ)
Toff
Eon
Eoff
100
Tf
100
Tf
20
1
10
100
200
50
1
10
100
200
Gate Resistance, R
G
(
Ω
)
Gate Resistance, R
G
(
Ω
)
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
100
R
G
= 10
Ω
T
C
= 25
℃
T
C
= 125
℃
Switching Time (ns)
Switching Time [nS]
Toff
100
Toff
Tf
Ton
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
10
Tr
R
G
= 10
Ω
T
C
= 25℃
T
C
= 125℃
Tf
20
10
15
20
25
30
35
40
10
15
20
25
30
35
40
Collector Current, Ic (A)
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGAF40N60UFD Rev. A
FGAF40N60UFD
3000
15
Common Emitter
R
L
=15
Ω
Gate-Emitter Voltage, V
GE
(V)
1000
12
(Tc=25
℃
)
300V
Switching Time (uJ)
9
200V
Vcc=100V
Eon
100 Eoff
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 10
Ω
T
C
= 25℃
T
C
= 125℃
10
10
15
20
25
30
35
40
6
3
0
0
30
60
90
120
Collector Current , Ic (A)
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
Ic MAX (Pulsed)
100
100
Collector Current, Ic [A]
50
µ
s
Ic MAX (Continuous)
10
1ms
100
µ
s
Collector Current, I
C
[A]
10
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
1
Safe Operating Area
o
V
GE
=20V, T
C
=100 C
0.1
1
10
100
1000
0.1
Collector - Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Thermal Response [Zthjc]
1
0 .5
0 .2
0 .1
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .0 1
sin gle p ulse
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
京公网安备 11010802033920号
EEWORLD
