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2SC4738-GR(TE85L,F

Description
transistors bipolar - bjt 150ma 50v
Categorysemiconductor    Discrete semiconductor   
File Size202KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SC4738-GR(TE85L,F Overview

transistors bipolar - bjt 150ma 50v

2SC4738-GR(TE85L,F Parametric

Parameter NameAttribute value
ManufactureToshib
Product CategoryTransistors Bipolar - BJT
RoHSYes
ConfiguratiSingle
Transistor PolarityNPN
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Curre0.15 A
Gain Bandwidth Product fT80 MHz (Min)
Maximum Operating Temperature+ 125 C
Mounting StyleSMD/SMT
Package / CaseVESM
Continuous Collector Curre150 mA
DC Collector/Base Gain hfe Mi200
DC Current Gain hFE Max400
Maximum Power Dissipati100 mW
PackagingReel
Factory Pack Quantity3000
2SC4738
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4738
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/ h
FE
(I
C
= 2 mA)
= 0.95 (typ.)
High h
FE
: h
FE
= 120~700
Complementary to 2SA1832
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2H1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 2.4 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE
(sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
80
Typ.
0.1
2.0
Max
0.1
0.1
700
0.25
3.5
V
MHz
pF
Unit
μA
μA
Note: h
FE
classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Marking
1
2007-11-01

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