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FR85DR02

Description
rectifiers 200v 85a rev leads fast recovery
CategoryDiscrete semiconductor    diode   
File Size544KB,2 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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FR85DR02 Overview

rectifiers 200v 85a rev leads fast recovery

FR85DR02 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerGeneSiC
package instructionO-MUPM-D1
Reach Compliance Codecompli
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JEDEC-95 codeDO-5
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current1369 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current85 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage200 V
Maximum reverse current25 µA
Maximum reverse recovery time0.2 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
FR85B02 thru FR85JR02
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V
RRM
DO-5 Package
V
RRM
= 100 V - 600 V
I
F
= 85 A
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
100 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
FR85B(R)02
100
70
100
85
1369
-40 to 125
-40 to 150
FR85D(R)02
200
140
200
85
1369
-40 to 125
-40 to 150
FR85G(R)02
400
280
400
85
1369
-40 to 125
-40 to 150
FR85J(R)02
600
420
600
85
1369
-40 to 125
-40 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 85 A, T
j
= 25 °C
V
R
= 100 V, T
j
= 25 °C
V
R
= 100 V, T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
FR85B(R)02
1.4
25
20
FR85D(R)02
1.4
25
20
FR85G(R)02
1.4
25
20
FR85J(R)02
1.4
25
20
Unit
V
μA
mA
Recovery Time
Maximum reverse recovery
time
T
RR
200
200
200
250
nS
www.genesicsemi.com/index.php/silicon-products/fast-rec
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