2N5401
2N5401
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= 150V
• Collector Dissipation: P
C
(max)=625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-160
-150
-5
-600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -120V, I
E
=0
V
EB
= -3V, I
C
=0
I
C
= -1mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -50mA, V
CE
= -5V
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, V
CE
= -10V,
f=100MHz
V
CB
= -10V, I
E
=0, f=1MHz
I
C
= -250µA, V
CE
= -5V
R
S
=1KΩ
f=10Hz to 15.7KHz
100
30
60
50
Min.
-160
-150
-5
-50
-50
240
-0.2
-0.5
-1
-1
400
6
8
V
V
V
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
nA
nA
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
N
F
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
2N5401
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-10
V
CE
= -5V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
V
BE
(sat)
-1
100
V
CE
(sat)
-0.1
10
-1
-10
-100
-1000
-0.01
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
100
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
I
E
= 0
f = 1MHz
-100
C
ob
[pF], CAPACITANCE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
10
-10
1
-1
-0.0
0.1
-1
-10
-100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Output Capacitance
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
V
CE
= -10V
100
10
1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
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As used herein:
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device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I11
Embedded System
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