BD136/138/140
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD136
: BD138
: BD140
: BD136
: BD138
: BD140
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
- 1.5
- 3.0
- 0.5
12.5
1.25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD136
: BD138
: BD140
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 45
- 60
- 80
- 0.1
- 10
25
25
40
Typ.
Max.
Units
V
V
V
µA
µA
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
V
CB
= - 30V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 5mA
V
CE
= - 2V, I
C
= - 0.5A
V
CE
= - 2V, I
C
= - 150mA
I
C
= - 500mA, I
B
= - 50mA
V
CE
= - 2V, I
C
= - 0.5A
250
- 0.5
-1
V
V
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
h
FE
Classificntion
Classification
h
FE3
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD136/138/140
Typical Characteristics
100
90
80
-500
V
CE
(sat)[mV], SATURATION VOLTAGE
V
CE
= -2V
-450
-400
-350
-300
-250
-200
-150
-100
-50
-0
-1E-3
h
FE
, DC CURRENT GAIN
70
60
50
40
30
20
10
0
-10
I
C
= 20 I
B
-0.01
-0.1
-1
I
C
= 10
I
B
-100
-1000
-10
I
C
[mA], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-1.1
-10
V
BE
[V], BASE-EMITTER VOLTAGE
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-1E-3
-0.01
-0.01
-0.1
-1
-10
-1
I
C
[A], COLLECTOR CURRENT
t)
(sa
V
BE
0 I
B
1
I
C
=
)
(on V
V
BE
5
=-
V
CE
I
C
MAX. (Pulsed)
I
C
MAX. (Continuous)
1 ms
-1
10us
0u
10
s
DC
-0.1
BD140
BD136
BD138
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
P
C
[W], POWER DISSIPATION
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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©2000 Fairchild Semiconductor International
Rev. E
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