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BSD214SN L6327

Description
mosFET N-kanal sml sig mos
Categorysemiconductor    Discrete semiconductor   
File Size327KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric View All

BSD214SN L6327 Overview

mosFET N-kanal sml sig mos

BSD214SN L6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Vgs - Gate-Source Breakdown Voltage12 V
Id - Continuous Drain Curre1.5 A
Rds On - Drain-Source Resistance140 mOhms
ConfiguratiSingle
Qg - Gate Charge0.8 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati500 mW
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
PackagingReel
Channel ModeEnhanceme
Fall Time1.4 ns
Forward Transconductance - Mi4 S
Minimum Operating Temperature- 55 C
Rise Time7.8 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time6.8 ns
BSD214SN
OptiMOS 2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
140
250
1.5
A
V
mW
PG-SOT363
6
5
4
1
2
3
Type
BSD214SN
Package
PG-SOT-
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
X5s
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.5 A,
R
GS
=25
W
Value
1.5
1.2
6
3.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
I
D
=1.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Rev 2.4
page 1
2013-04-10
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