SM-8 COMPLEMENTARY MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6718
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T6718
B
1
E
1
B
2
E
2
NPN
PNP
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
NPN
20
20
5
6
2
PNP
-20
-20
-5
-6
-1.5
UNIT
V
V
V
A
A
°C
-55 to +150
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2
2.5
16
20
62.5
50
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 372
ZDT6718
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current
Collector Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
7
70
130
0.89
0.79
200
300
200
100
100
400
450
360
180
140
23
170
400
30
MHz
pF
MIN.
20
20
5
TYP.
100
27
8.3
100
100
100
15
150
200
1.0
1.0
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=16V
V
EB
=4V
V
CES
=16V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2.5A, I
B
=50mA*
I
C
=2.5A, I
B
=50mA*
I
C
=2.5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A
I
B1
=-I
B2
=10mA
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see SuperSOT FMMT618 datasheet.
3 - 373
ZDT6718
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(SAT)
-16
-130
-145
-0.87
-0.81
300
300
150
50
15
150
475
450
230
70
30
180
21
40
670
30
MHz
pF
MIN.
-20
-20
-5
TYP.
-65
-55
-8.8
-100
-100
-100
-40
-200
-220
-1.0
-1.0
MAX. UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-15V
V
EB
=-4V
V
CES
=-15V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
CC
=-10V, I
C
=-1A
I
B1
=I
B2
=20mA
V
BE(SAT)
V
BE(ON)
h
FE
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical characteristics graphs see SuperSOT FMMT718 datasheet.
3 - 374
Embedded System
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