BSZ042N04NS G
OptiMOS™3
Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSZ042N04NS G
Package
PG-TSDSON-8
Marking
042N04N
Product Summary
V
DS
R
DS(on),max
I
D
40
4.2
40
PG-TSDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
40
40
160
20
150
±20
Unit
A
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
Ω
mJ
V
J-STD20 and JESD22
Rev. 1.3
page 1
2009-11-05
BSZ042N04NS G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=60 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
69
2.1
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
1.8
60
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=36 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
2)
40
2
-
-
-
0.1
-
4
1
V
µA
-
-
-
-
10
10
3.5
1.8
61
100
100
4.2
-
-
nA
mΩ
Ω
S
I
GSS
R
DS(on)
R
G
g
fs
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=20 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
30
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
3)
Rev. 1.3
page 2
2009-11-05
BSZ042N04NS G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.84
40
160
1.2
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 10 V
V
DD
=20 V,
V
GS
=0 V
V
DD
=20 V,
I
D
=20 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
-
14
8.5
4.3
10
35
5.0
33
30
-
-
-
-
46
-
-
-
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=20 V,
f
=1 MHz
-
-
-
-
-
-
-
2800
820
30
14
3.4
20
4.2
3700
1100
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery charge
4)
5)
Q
rr
-
-
38
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2009-11-05
BSZ042N04NS G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
80
50
40
60
30
P
tot
[W]
40
I
D
[A]
20
10
0
0
40
80
120
160
0
40
80
120
160
20
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
10
2
10 µs
100 µs
DC
1
0.5
Z
thJC
[K/W]
I
D
[A]
10
1
0.2
0.1
0.05
0.02
0.01
single pulse
1 ms
10 ms
0.1
10
0
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.3
page 4
2009-11-05
BSZ042N04NS G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
300
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
18
16
14
5V
10 V
250
200
I
D
[A]
6.5 V
R
DS(on)
[m
Ω
]
7V
12
10
8
6
6V
6.5 V
7V
10 V
5.5 V
150
100
6V
50
5.5 V
4
2
0
5V
0
0
1
2
3
0
10
20
30
40
50
60
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
200
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
180
160
135
120
g
fs
[S]
80
150 °C
I
D
[A]
90
45
25 °C
40
0
2
3
4
5
6
7
8
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 1.3
page 5
2009-11-05
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