BAR1.../BAR61...
Silicon PIN Diode
•
RF switch, RF attenuator for frequencies
above 10 MHz
•
Low distortion faktor
•
Long-term stability of electrical characteristics
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BAR14-1
!
BAR15-1
!
BAR16-1
!
BAR61
"
,
!
, !
,
,
,
,
,
,
,
Type
BAR14-1
BAR15-1
BAR16-1
BAR61
Package
SOT23
SOT23
SOT23
SOT143
Configuration
series
common cathode
common anode
PI element
L
S
(nH)
1.8
1.8
1.8
2
Marking
L7s
L8s
L9s
61s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Symbol
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
≤
65°C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
Value
100
140
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
V
R
I
F
P
tot
T
j
T
op
T
stg
Symbol
R
thJS
Value
≤
340
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
BAR1.../BAR61...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Reverse current
V
R
= 50 V
V
R
= 100 V
Forward voltage
I
F
= 100 mA
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 100 MHz
V
R
= 50 V,
f
= 1 MHz
Zero bias conductance
V
R
= 0 V,
f
= 100 MHz
Forward resistance
I
F
= 0.01 mA,
f
= 100 MHz
I
F
= 0.1 mA,
f
= 100 MHz
I
F
= 1 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
W
I
-
146
-
µm
τ
rr
r
f
-
300
35
5.5
700
2600
470
55
8
1000
4200
-
85
12
-
ns
Ω
g
P
C
T
-
-
-
0.2
0.25
50
0.5
0.5
100
µS
pF
Unit
max.
nA
typ.
I
R
-
-
V
F
-
-
-
1.05
100
1000
1.25
V
2
2007-04-19
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