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FJV3104RMTF

Description
transistors switching - resistor biased 50v/100ma/47k 47k
CategoryDiscrete semiconductor    The transistor   
File Size162KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FJV3104RMTF Overview

transistors switching - resistor biased 50v/100ma/47k 47k

FJV3104RMTF Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
FJV3104R — NPN Epitaxial Silicon Transistor with Bias Resistor
November 2013
FJV3104R
NPN Epitaxial Silicon Transistor with Bias Resistor
Features
• 100 mA Output Current Capability
• Built-in Bias Resistor (R
1
= 47 kΩ, R
2
= 47 kΩ)
Description
Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing compo-
nent count and simplifying circuit design.
Application
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments
Equivalent Circuit
C
3
B
R1
2
1
R2
SOT-23
E
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
FJV3104RMTF
Top Mark
R24
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Value
50
50
10
100
150
-55 to 150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
FJV3104R Rev. 1.1.2
www.fairchildsemi.com
1
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