BAS16
BAS16
Connection Diagram
3
3
3
A6
2
1
1
2
1
2NC
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
85
200
1.0
2.0
-55 to +150
-55 to +150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 5.0
µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 75 V
V
R
= 25 V, T
A
= 150°C
V
R
= 75 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
Min
85
Max
715
855
1.0
1.25
1.0
30
50
2.0
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
I
R
Reverse Current
C
T
t
rr
Total Capacitance
Reverse Recovery Time
2001
Fairchild Semiconductor Corporation
BAS16, Rev. C
BAS16
Small Signal Diode
(continued)
Typical Characteristics
150
Reverse Voltage, V
R
[v]
140
130
Reverse Current, I
R
[nA]
Ta= 25°C
300
Ta= 25°C
250
200
150
100
50
0
10
20
30
50
Reverse Voltage, V
R
[v]
70
100
120
R
110
1
2
3
5
10
20 30
Reverse Current, I
R
[uA]
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Forward Voltage, V
F
[mV]
Forward Voltage, V
F
[mV]
F
485
Ta= 25°C
450
400
350
300
250
225
1
2
3
F
725
Ta= 25°C
700
650
600
550
500
450
0.1
F
5
10
20 30
Forward Current, I
F
[uA]
50
100
0.2 0.3 0.5
1
2
3
Forward Current, I
F
[mA]
5
10
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.5
1.2
1
0.8
0.6
10
Total Capacitance, C
T
[pF]
20
30
50
100
200 300
Forward Current, I
F
[mA]
500
Forward Voltage, V
F
[V]
1.4
Ta= 25°C
1.3
Ta= 25
°
C
1.2
1.1
F
1
0
2
4
6
8
10
Reverse Voltage [V]
12
14
15
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
Figure 6. Total Capacitance
BAS16, Rev. C
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E
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®
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®
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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First Production
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Rev. H4
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