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BYT28-300

Description
5 A, 300 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BYT28-300 Overview

5 A, 300 V, SILICON, RECTIFIER DIODE

BYT28-300 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-609 codee3
Maximum non-repetitive peak forward current60 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYT28 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
1.05 V
I
O(AV)
= 10 A
t
rr
60 ns
SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYT28 series is supplied in the
conventional
leaded
SOT78
(TO220AB) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
R
I
O(AV)
I
FSM
PARAMETER
CONDITIONS
BYT28
Repetitive peak reverse voltage
Continuous reverse voltage
T
mb
147˚C
Average rectified output current
(both diodes conducting)
1
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
square wave;
δ
= 0.5;
T
mb
115 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-40
-
MIN.
-300
300
300
MAX.
-400
400
400
10
50
55
150
150
-500
500
500
UNIT
V
V
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
60
MAX.
4.5
3.0
-
UNIT
K/W
K/W
K/W
1
Neglecting switching and reverse current losses.
October 1998
1
Rev 1.400

BYT28-300 Related Products

BYT28-300 BYT28 BYT28-500
Description 5 A, 300 V, SILICON, RECTIFIER DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE 5 A, 500 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to - conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow
Diode type RECTIFIER DIODE - RECTIFIER DIODE
Maximum forward voltage (VF) 1.4 V - 1.4 V
JESD-609 code e3 - e3
Maximum non-repetitive peak forward current 60 A - 60 A
Maximum operating temperature 150 °C - 150 °C
Maximum output current 10 A - 10 A
Maximum repetitive peak reverse voltage 300 V - 500 V
Maximum reverse recovery time 0.05 µs - 0.05 µs
surface mount NO - NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
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