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BFQ 19S E6327

Description
transistors bipolar - bjt npn silicon RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size539KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BFQ 19S E6327 Overview

transistors bipolar - bjt npn silicon RF transistor

BFQ 19S E6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors Bipolar - BJT
RoHSYes
ConfiguratiSingle
Transistor PolarityNPN
Collector- Base Voltage VCBO20 V
Collector- Emitter Voltage VCEO Max15 V
Emitter- Base Voltage VEBO3 V
Maximum DC Collector Curre0.21 A
Gain Bandwidth Product fT5500 MHz
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-89-4
Continuous Collector Curre0.21 A
DC Collector/Base Gain hfe Mi40 at 70 mA at 8 V
Maximum Power Dissipati1000 mW
Minimum Operating Temperature- 65 C
PackagingReel
Factory Pack Quantity1000
BFQ19S
Low Noise Silicon Bipolar RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
Pb-free (RoHS compliant) package
Qualification report according to AEC-Q101 available
2
3
2
1
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFQ19S
Parameter
Marking
FG
Pin Configuration
1=B
2=C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
Symbol
R
thJS
3=E
Value
Package
SOT89
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
85°C
15
20
20
3
120
12
1
150
-65 ... 150
-65 ... 150
Value
V
mA
W
°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
S
is
2
For
65
K/W
measured on the collector lead at the soldering point to the pcb
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
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