IPP147N12N3 G datasheet, PDF - EEWORLD Datasheet

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IPP147N12N3 G: Descriptionmosfet N-channel 120v mosfet; Categorysemiconductor Discrete semiconductor; File Size769KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPP147N12N3 G Overview

mosfet N-channel 120v mosfet

IPP147N12N3 G Parametric

Parameter Name	Attribute value
Manufacture	Infine
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V
Vgs - Gate-Source Breakdown Voltage	20 V
Id - Continuous Drain Curre	56 A
Rds On - Drain-Source Resistance	14.7 mOhms
Configurati	Single
Qg - Gate Charge	37 nC
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipati	107 W
Mounting Style	Through Hole
Package / Case	I2PAK-3
Packaging	Tube
Fall Time	4 nS
Minimum Operating Temperature	- 55 C
Rise Time	9 nS
Factory Pack Quantity	500
Typical Turn-Off Delay Time	24 nS

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IPB144N12N3 G

IPI147N12N3 G

IPP147N12N3 G

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3 Power-Transistor

Features

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Product Summary

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IPP147N12N3 G Related Products

	IPP147N12N3 G	IPB144N12N3 G
Description	mosfet N-channel 120v mosfet	mosfet N-channel 120v mosfet
Manufacture	Infine	Infine
Product Category	MOSFET	MOSFET
RoHS	Yes	Yes
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	120 V	120 V
Vgs - Gate-Source Breakdown Voltage	20 V	20 V
Id - Continuous Drain Curre	56 A	56 A
Rds On - Drain-Source Resistance	14.7 mOhms	14.7 mOhms
Configurati	Single	Single
Qg - Gate Charge	37 nC	37 nC
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd - Power Dissipati	107 W	107 W
Mounting Style	Through Hole	SMD/SMT
Package / Case	I2PAK-3	D2PAK-2
Packaging	Tube	Reel
Fall Time	4 nS	4 nS
Minimum Operating Temperature	- 55 C	- 55 C
Rise Time	9 nS	9 nS
Factory Pack Quantity	500	1000
Typical Turn-Off Delay Time	24 nS	24 nS

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