BLV25
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLV25
is a 28 V silicon NPN
power transistor designed primarily for
VHF FM broadcast transmitters.
PACKAGE STYLE .500 6L FLG
C
A
2
D
1
2x Ø N
FULL R
FEATURES:
•
28 V operation
•
P
G
= 10 dB at 175 W/108 MHz
•
Omnigold™
Metalization System
•
Diffused Ballast Resistors
DIM
B
G
3
.725/18,42
F
4
E
K
H
M INIM UM
inches / m m
M
L
J
I
M AX IM UM
inches / m m
MAXIMUM RATINGS
I
C
V
CESM
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
17.5 A
65 V
33 V
4.0 V
220 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.80 °C/W
A
B
C
D
E
F
G
H
I
J
K
L
M
N
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
1 = COLLECTOR
2&4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
V
CEsat
C
c
P
G
η
C
I
C
= 50 mA
T
C
= 25°C
NONETEST
CONDITIONS
I
C
= 200 mA
I
E
= 20 mA
V
CE
= 33 V
V
CE
= 25 V
I
C
= 20 A
V
CB
= 25 V
V
CC
= 28 V
P
OUT
= 175 W
I
C
= 8.5 A
I
C
= 4.0 A
f = 1.0 MHz
f = 108 MHz
MINIMUM TYPICAL MAXIMUM
65
33
4.0
25
15
1.6
275
10
65
100
UNITS
V
V
V
mA
---
V
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. D
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