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DTC114WE RK

Description
transistors bipolar - bjt digital transistor npn
Categorysemiconductor    Discrete semiconductor   
File Size323KB,3 Pages
ManufacturerAll Sensors
Environmental Compliance
Download Datasheet Parametric View All

DTC114WE RK Overview

transistors bipolar - bjt digital transistor npn

DTC114WE RK Parametric

Parameter NameAttribute value
ManufactureTaiwan Semiconduc
Product CategoryTransistors Bipolar - BJT
RoHSYes
Transistor PolarityNPN
PackagingReel
Factory Pack Quantity3000
DTC114 EM/EE/EUA/ECA/ESA
NPN Small Signal Transistor
Small Signal Diode
Features
Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Only the on/off conditions need to be set for
operation,marking device design easy.
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Ordering Information
Package
SOT-723
SOT-523
SOT-323
SOT-23
TO-92S
Part No.
DTC114 EM
DTC114 EE
DTC114 EUA
DTC114 ECA
DTC114 ESA
Packing
8K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Value
EUA
ECA
200
50
-10½40
50
100
-55 to + 150
Type Number
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
Symbol
PD
V
CC
V
IN
I
O
I
C(MAX)
TJ, T
STG
EM
100
EE
150
ESA
300
Units
mW
V
V
mA
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V
I(on)
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min
0.5
Typ
Max
3
0.3
0.88
0.5
Condtion
V
CC
=5V,I
O
=100μA
V
O
=0.3V,I
O
=10mA
I
O
/I
I
=10mA/5mA
V
I
=5V
V
CC
=50V,V
I
=0
V
O
=5V,I
O
=5mA
Unit
V
V
mA
μA
30
7
0.8
10
1
250
13
1.2
KΩ
V
O
=10V,I
O
=5mA,f=100MHz
MHz
Version:A12
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