FQI7N80
— N-Channel QFET
®
MOSFET
November 2013
FQI7N80
N-Channel QFET
®
MOSFET
800
V,
6.6
A,
1.5
Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
6.6
A, 800 V, R
DS(on)
=
1.5
Ω
(Max.) @ V
GS
= 10 V,
I
D
=
3.7
A
• Low Gate Charge (Typ.
40
nC)
• Low Crss (Typ.
19
pF)
• 100% Avalanche Tested
•
RoHS Compliant
D
G
DS
I
2
-PAK
G
S
Absolute Maximum Ratings
)
5
5
)
<
5
<
!6
9
T
C
= 25°C unless otherwise noted.
0
+7-82
0
+,((82
9
FQI7N80TU
'((
%%
17
7% 1
±;(
)
&
&
&
)
=
&
=
)6
A
A
A68
8
8
9
0
+7-82@
9
0
+7-82
"!7-8
*
-'(
%%
,% >
1(
; ,;
,%>
, ;1
--B,-(
;((
Maximum Lead Temperature for Soldering, 1/8"
from Case for 5 Seconds.
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum
Pad
of 2-oz
Copper),
Max.
Thermal Resistance, Junction to Ambient (*1 in
2
Pad
of 2-oz
Copper),
Max.
FQI7N80TU
0.75
62.5
40
o
C/W
Unit
©2010 Fairchild Semiconductor Corporation
FQI7N80
Rev. C1
1
www.fairchildsemi.com
FQI7N80
— N-Channel QFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FQI7N80TU
Top Mark
FQI7N80
Package
I
2
-PAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50
units
Electrical Characteristics
T
C
= 25°C unless otherwise noted.
.
.
Max.
D)
∆D)
6∆
5
5
5
D ?
)
E: )
: D/ ?
: D/ ?
*!
)
+()5
+7-(µ&
5
)
+'(())
+()
)
+%1()
+,7-8
)
+;())
+()
)
+;())
+()
'((
( >>
,(
,((
,((
,((
)
)68
µ&
µ&
&
&
)
*
: )
)
+)
5
+7-(µ&
)
+,()5
+; ;&
)
+-()5
+; ;&
;(
,7
-
-(
,-
)
Ω
)
+7-))
+()
+, ( F#
,17(
,-(
,3
,'-(
,3-
7-
G
G
G
*
:
:
)
+1(()5
+% %&
*
+7-Ω
(Note 4)
Note 4)
;-
'(
3-
--
1(
'-
7(
'(
,>(
7((
,7(
-7
V
DS
= 640 V, I
D
= 6.6 A,
V
GS
= 10 V
5
5
)
G
)
+()5
+% %&
)
+()5
+% %&
5
6+,((&6µ
1((
1;
%%
7% 1
,1
&
&
)
µ
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 25 mH, I
AS
= 6.6 A, V
DD
= 50 V, R
G
= 25
Ω,
starting T
J
= 25°C.
3. I
SD
≤
6.6 A, di/dt
≤
200 A/µs , V
DD
≤
BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
©2010 Fairchild Semiconductor Corporation
FQI7N80
Rev. C1
2
www.fairchildsemi.com
FQI7N80
— N-Channel QFET
®
MOSFET
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
I
G
= const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
10V
R
L
V
DD
V
DS
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure 13. Resistive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
GS
10V
GS
t
p
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FQI7N80
Rev. C1
5
www.fairchildsemi.com
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