MRF6V4300NBR1 datasheet, PDF - EEWORLD Datasheet

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MRF6V4300NBR1: Descriptiontransistors RF mosfet vhv6 300w to272wb4; Categorysemiconductor Discrete semiconductor; File Size812KB，15 Pages; ManufacturerFREESCALE (NXP); Environmental Compliance

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transistors RF mosfet vhv6 300w to272wb4

MRF6V4300NBR1 Parametric

Parameter Name	Attribute value
Manufacture	Freescale Semiconduc
Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Dual Common Source
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	110 V
Vgs - Gate-Source Breakdown Voltage	- 6 V, 10 V
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	TO-270 WB EP
Packaging	Reel
Minimum Operating Temperature	- 65 C
Factory Pack Quantity	500
Unit Weigh	2 g

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Freescale Semiconductor

Technical Data

Document Number: MRF6V4300N

Rev. 3, 4/2010

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed primarily for CW large--signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance: V

= 50 Volts, I

= 900 mA, P

out

= 300 Watts,

f = 450 MHz

Power Gain — 22 dB

Drain Efficiency — 60%

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Qualified Up to a Maximum of 50 V

Operation

•

Integrated ESD Protection

•

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

225°C Capable Plastic Package

•

RoHS Compliant

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6V4300NR1

MRF6V4300NBR1

10-

-600 MHz, 300 W, 50 V

LATERAL N-

-CHANNEL

SINGLE-

-ENDED

BROADBAND

RF POWER MOSFETs

CASE 1486-

-03, STYLE 1

TO-

-270 WB-

-4

PLASTIC

MRF6V4300NR1

CASE 1484-

-04, STYLE 1

TO-

-272 WB-

-4

PLASTIC

MRF6V4300NBR1

PARTS ARE SINGLE-

-ENDED

out

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Figure 1. Pin Connections

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

225

Unit

Vdc

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6V4300NR1 MRF6V4300NBR1

RF Device Data

Freescale Semiconductor

MRF6V4300NBR1 Related Products

	MRF6V4300NBR1	MRF6V4300NR5	MRF6V4300NR1	MRF6V4300NBR5
Description	transistors RF mosfet vhv6 300w to272wb4	transistors RF mosfet vhv6 300w to270wb4	mosfet RF N-CH 300w TO-270-4	transistors RF mosfet vhv6 300w latrl N-Ch SE broadband mosfet
Package / Case	TO-270 WB EP	TO-272-4 WB EP	TO-270AB	-
Packaging	Reel	Reel	Tape & Reel (TR)	-

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