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2N7002 H6327

Description
mosfet N-channel 60v mosfet
Categorysemiconductor    Discrete semiconductor   
File Size252KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

2N7002 H6327 Overview

mosfet N-channel 60v mosfet

2N7002 H6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre300 mA
Rds On - Drain-Source Resistance3 Ohms
ConfiguratiSingle
Qg - Gate Charge0.4 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati500 mW
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingReel
Fall Time3.1 nS
Minimum Operating Temperature- 55 C
Rise Time3.3 nS
Factory Pack Quantity3000
Typical Turn-Off Delay Time5.5 nS
2N7002
OptiMOS Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• fast switching
• Pb-free lead-plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
60
3
4
0.3
PG-SOT23
3
V
Ω
A
1
2
Type
2N7002
Parameter
Package
PG-SOT-23
Tape and Reel Information
H6327: 3000 pcs/reel
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Marking
72s
HalogenFree
Yes
Value
V l
0.30
0.24
1.2
1.3
6
±20
Packing
Non Dry
Unit
A
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
ESD class
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
(1)
I
D,pulse
E
AS
dv /dt
V
GS
T
A
=25 °C
I
D
=0.3 A,
R
GS
=25
Ω
I
D
=0.3 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
mJ
kV/µs
V
JESD22-A114 (HBM)
P
tot (2)
T
j
,
T
stg
T
A
=25 °C
class 0 (<250V)
0.5
-55 ... 150
55/150/56
W
°C
J-STD20 and JESD22
Rev. 2.4
page 1
2012-09-04
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