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BFS 17P E6327

Description
transistors bipolar - bjt npn silicon RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size512KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BFS 17P E6327 Overview

transistors bipolar - bjt npn silicon RF transistor

BFS 17P E6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors Bipolar - BJT
RoHSYes
ConfiguratiSingle
Transistor PolarityNPN
Collector- Base Voltage VCBO25 V
Collector- Emitter Voltage VCEO Max15 V
Emitter- Base Voltage VEBO2.5 V
Maximum DC Collector Curre0.025 A
Gain Bandwidth Product fT2.5 MHz
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-23
DC Collector/Base Gain hfe Mi20
Maximum Power Dissipati280 mW
Minimum Operating Temperature- 65 C
PackagingReel
Factory Pack Quantity3000
BFS17P
NPN Silicon RF Transistor
For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
Pb-free (RoHS compliant) package
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFS17P
Marking
MCs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
J
T
A
T
Stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
1)
T
S
55 °C
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Value
340
V
mA
mW
°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
thJA
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
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