MRFE6VP61K25HR5 datasheet, PDF

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MRFE6VP61K25HR5: Descriptiontransistors RF mosfet vhv6 1.25kw ism ni1230h; Categorysemiconductor Discrete semiconductor; File Size879KB，23 Pages; ManufacturerFREESCALE (NXP); Environmental Compliance

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transistors RF mosfet vhv6 1.25kw ism ni1230h

MRFE6VP61K25HR5 Parametric

Parameter Name	Attribute value
Manufacture	Freescale Semiconduc
Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Single
Transistor Polarity	N-Channel
Frequency	1.8 MHz, 600 MHz
Gai	24 dB
Output Powe	1250 W
Vds - Drain-Source Breakdown Voltage	133 V
Id - Continuous Drain Curre	10 uA
Vgs - Gate-Source Breakdown Voltage	10 V
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	NI-1230
Packaging	Reel
Pd - Power Dissipati	1333 W
Factory Pack Quantity	50
Vgs th - Gate-Source Threshold Voltage	2.2 V
Unit Weigh	13.155 g

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Freescale Semiconductor

Technical Data

Document Number: MRFE6VP61K25H

Rev. 4.1, 3/2014

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.



Typical Performance: V

= 50 Volts, I

= 100 mA

Signal Type

Pulse

(100

sec,

20% Duty Cycle)

out

(W)

1250 Peak

1250 CW

(MHz)

230

(dB)

24.0

22.9



(%)

74.0

74.6

MRFE6VP61K25HR6

MRFE6VP61K25HR5

MRFE6VP61K25HSR5

MRFE6VP61K25GSR5

1.8-

-600 MHz, 1250 W CW, 50 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Application Circuits

(1)

— Typical Performance

Frequency

(MHz)

81.36

87.5--108

144--148

170--230

352

Signal Type

DVB--T

Pulse

(200

sec,

20% Duty Cycle)

out

(W)

1300

1250

1100

1250

225

1250

(dB)

21.5



(%)

NI-

-1230S-

-4S

MRFE6VP61K25HSR5

NI-

-1230H-

-4S

MRFE6VP61K25HR6/R5

352

500

1150

1000

20.5

1. Contact your local Freescale sales office for additional information on specific

circuit designs.

Load Mismatch/Ruggedness

Frequency

(MHz)

230

Signal Type

Pulse

(100

sec,

20%

Duty Cycle)

VSWR

> 65:1 at all

Phase Angles

out

(W)

1500 Peak

(3 dB

Overdrive)

Test

Voltage

Result

No Device

Degradation

NI-

-1230GS-

-4L

MRFE6VP61K25GSR5

Gate A 3

1 Drain A

Features



Unmatched Input and Output Allowing Wide Frequency Range Utilization



Device can be used Single--Ended or in a Push--Pull Configuration

Qualified Up to a Maximum of 50 V

Operation

Characterized from 30 V to 50 V for Extended Power Range

Suitable for Linear Application with Appropriate Biasing

Integrated ESD Protection with Greater Negative Gate--Source Voltage Range

for Improved Class C Operation



Characterized with Series Equivalent Large--Signal Impedance Parameters



In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.

Gate B 4

2 Drain B

(Top View)

Note: The backside of the package is the

source terminal for the transistors.

Figure 1. Pin Connections



MRFE6VP61K25HR6

MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5

RF Device Data

Freescale Semiconductor, Inc.

MRFE6VP61K25HR5 Related Products

	MRFE6VP61K25HR5	MRFE6VP61K25HR6	MRFE6VP61K25GSR5	MRFE6VP61K25HSR5
Description	transistors RF mosfet vhv6 1.25kw ism ni1230h	transistors RF mosfet vhv6 1.25kw ism ni1230h	transistors RF mosfet vhv6 1.25kw ism ni1230gs	transistors RF mosfet vhv6 1.25kw ism ni1230hs
Manufacture	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc
Product Category	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET
RoHS	Yes	Yes	Yes	Yes
Packaging	Reel	Reel	Reel	Reel
Factory Pack Quantity	50	150	50	50
Unit Weigh	13.155 g	13.155 g	7.528 g	8.488 g
Configurati	Single	Single	-	Single
Transistor Polarity	N-Channel	N-Channel	-	N-Channel
Frequency	1.8 MHz, 600 MHz	1.8 MHz, 600 MHz	-	1.8 MHz, 600 MHz
Gai	24 dB	24 dB	-	24 dB
Output Powe	1250 W	1250 W	-	1250 W
Vds - Drain-Source Breakdown Voltage	133 V	133 V	-	133 V
Id - Continuous Drain Curre	10 uA	10 uA	-	10 uA
Vgs - Gate-Source Breakdown Voltage	10 V	10 V	-	10 V
Maximum Operating Temperature	+ 150 C	+ 150 C	-	+ 150 C
Mounting Style	SMD/SMT	SMD/SMT	-	SMD/SMT
Package / Case	NI-1230	NI-1230	-	NI-1230S
Pd - Power Dissipati	1333 W	1333 W	-	1333 W
Vgs th - Gate-Source Threshold Voltage	2.2 V	2.2 V	-	2.2 V

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