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BFP 193 E6327

Description
transistors RF bipolar npn silicon RF transistor
Categorysemiconductor    Discrete semiconductor   
File Size537KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BFP 193 E6327 Overview

transistors RF bipolar npn silicon RF transistor

BFP 193 E6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors RF Bipol
RoHSYes
TypeRF Bipolar Small Signal
Transistor PolarityNPN
Maximum Operating Frequency8 GHz
Collector- Emitter Voltage VCEO Max12 V
Emitter- Base Voltage VEBO2 V
Continuous Collector Curre0.08 A
Maximum Operating Temperature+ 150 C
Power Dissipati580 mW
ConfiguratiSingle Dual Emitte
Mounting StyleSMD/SMT
Package / CaseSOT-143-4
PackagingReel
Maximum DC Collector Curre0.08 A
Minimum Operating Temperature- 65 C
Factory Pack Quantity3000
BFP193
Low Noise Silicon Bipolar RF Transistor
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
f
T
= 8 GHz,
NF
min
= 1 dB at 900 MHz
Pb-free (RoHS compliant) package
Qualification report according to AEC-Q101 available
4
1
3
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP193
Marking
Pin Configuration
RCs
1=C 2=E 3=B 4=E -
Package
-
SOT143
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
72°C
12
20
20
2
80
10
580
150
-55 ... 150
Value
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
135
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For the definition of
R
thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
1
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