Type
IPP096N03L G
IPB096N03L G
OptiMOS
®
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC for target applications
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
IPP096N03L G
IPB096N03L G
1)
Product Summary
V
DS
R
DS(on),max
I
D
30
9.6
35
V
m
A
Package
Marking
PG-TO220-3
096N03L
PG-TO263-3
096N03L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
I
D,pulse
I
AS
E
AS
T
C
=25 °C
T
C
=25 °C
I
D
=12 A,
R
GS
=25
I
D
=35 A,
V
DS
=24 V,
di /dt =200 A/μs,
T
j,max
=175 °C
Value
35
35
35
30
245
35
40
mJ
Unit
A
Reverse diode dv /dt
dv /dt
V
GS
6
kV/μs
Gate source voltage
1)
±20
V
J-STD20 and JESD22
Rev. 1.02
page 1
2007-08-29
IPP096N03L G
IPB096N03L G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol Conditions
P
tot
T
j
,
T
stg
T
C
=25 °C
Value
42
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm² cooling area
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 μA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
5)
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
2)
3)
4)
-
-
-
-
-
-
3.6
62
40
K/W
30
1
-
-
-
0.1
-
2.2
1
V
μA
-
-
-
-
-
10
10
11.3
8.0
1.1
53
100
100
14.1
9.6
-
-
S
nA
m
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
26
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Measured from drain tab to source pin
5)
Rev. 1.02
page 2
2007-08-29
IPP096N03L G
IPB096N03L G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
4.0
1.9
1.8
3.9
7.4
3.4
15
-
-
-
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
1200
500
24
4.0
3.2
16
2.6
1600
660
-
-
-
-
-
ns
pF
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
6.4
13
-
-
nC
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/μs
-
-
-
-
-
0.94
35
245
1.2
A
V
Reverse recovery charge
Q
rr
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.02
page 3
2007-08-29
IPP096N03L G
IPB096N03L G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
10 V
50
40
40
30
30
P
tot
[W]
I
D
[A]
20
10
0
0
50
100
150
200
20
10
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
1 μs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
10
2
10 μs
0.5
1
100 μs
0.2
0.1
0.05
0.02
I
D
[A]
DC
10
1
1 ms
10 ms
Z
thJC
[K/W]
0.1
0.01
single pulse
10
0
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.02
page 4
2007-08-29
IPP096N03L G
IPB096N03L G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
160
5V
3.2 V
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
24
20
3.5 V
4V
4.5 V
120
16
R
DS(on)
[m ]
I
D
[A]
4.5 V
80
4V
12
5V
10 V
8
11.5 V
40
3.5 V
4
3.2 V
3V
2.8 V
0
0
1
2
3
0
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
100
80
80
60
60
40
g
fs
[S]
40
20
175 °C
25 °C
I
D
[A]
20
0
0
1
2
3
4
5
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 1.02
page 5
2007-08-29
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