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BSS84AKM,315

Description
mosfet P-CH -50 V -230 mA 50v 230mA
CategoryDiscrete semiconductor    The transistor   
File Size837KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSS84AKM,315 Overview

mosfet P-CH -50 V -230 mA 50v 230mA

BSS84AKM,315 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeDFN
package instructionLEADLESS, ULTRA SMALL, PLASTIC, SC-101, DFN10063-3, 3 PIN
Contacts3
Manufacturer packaging codeSOT883
Reach Compliance Codecompli
BSS84AKM
SO
T8
83
50 V, 230 mA P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -100 mA;
T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
4.5
Max Unit
-50
20
V
V
-230 mA
7.5
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
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