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LY62W1024SL-55SLI

Description
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32,
Categorystorage    storage   
File Size441KB,16 Pages
ManufacturerLyontek
Websitehttp://www.lyontek.com.tw/index.html
Environmental Compliance
Download Datasheet Parametric View All

LY62W1024SL-55SLI Overview

Standard SRAM, 128KX8, 55ns, CMOS, PDSO32,

LY62W1024SL-55SLI Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid108136314
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time55 ns
Other featuresLG-MAX
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
length20.75 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP32,.56
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply3/5 V
Certification statusNot Qualified
Maximum standby current0.000008 A
Minimum standby current1.5 V
Maximum slew rate0.06 mA
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width11.303 mm

LY62W1024SL-55SLI Preview

®
LY62W1024
Rev. 1.8
128K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Description
Initial Issue
Revised I
SB1
LL/LLI-LLE(max)= 50/100
μA
=> 20/50
μA
I
DR
LL/LLI-LLE(max)= 20/40
μA
=> 12/30
μA
Added SL Spec.
Revised typos in
FEATURES
Revised I
SB1
/I
DR(MAX.)
Added I
SB1
/I
DR
values when T
A
= 25
and T
A
= 40
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package available
Added packing type in
ORDERING INFORMATION
Revised V
TERM
to V
T1
and V
T2
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised
PACKAGE OUTLINE DIMENSION
in page 10/11/12/13
Revised
ORDERING INFORMATION
in page 14
Deleted E Grade
Revised
PIN CONFIGURATION
in page 2
Issue Date
Aug.28.2005
Mar.30.2006
Nov.2.2007
May.6.2008
Mar.30.2009
Rev. 1.5
Rev. 1.6
Rev. 1.7
Rev. 1.8
May.7.2010
Aug.30.2010
Aug.9.2011
Apr.06.2012
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
0
®
LY62W1024
Rev. 1.8
128K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62W1024 is a 1,048,576-bit low power
CMOS static random access memory organized as
131,072 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62W1024 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY62W1024 operates from a single power
supply of 2.7V ~ 5.5V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 35/55/70ns
Low power consumption:
Operating current : 12/10/7mA (TYP.)
Standby current : 1μA (TYP.) LL-version
0.8μA (TYP.) SL-version
Single 2.7V ~ 5.5V power supply
All outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 32-pin 450 mil SOP
32-pin 600 mil P-DIP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62W1024
LY62W1024(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
2.7 ~ 5.5V
Speed
35/55/70ns
35/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.)
Operating(Icc,TYP.)
1µA(LL)/0.8µA(SL)
12/10/7mA
1µA(LL)/0.8µA(SL)
12/10/7mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A16
DQ0 – DQ7
DECODER
128Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A16
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
1
®
LY62W1024
Rev. 1.8
128K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
PS: All pin out definition are relative with “Lyontek logo” orientation.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2
®
LY62W1024
Rev. 1.8
128K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
3
®
LY62W1024
Rev. 1.8
128K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
PARAMETER
Supply Voltage
V
CC
2.7
*1
Input High Voltage
V
IH
0.7*Vcc
*2
Input Low Voltage
V
IL
- 0.2
Input Leakage Current
I
LI
V
CC
V
IN
V
SS
-1
Output Leakage
V
CC
V
OUT
V
SS
,
I
LO
-1
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
2.4
Output Low Voltage
V
OL
I
OL
= 2mA
-
Cycle time = Min.
- 35
-
CE# = V
IL
and CE2 = V
IH
,
I
CC
- 55
-
I
I/O
= 0mA
- 70
-
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE# = 0.2V and CE2
V
CC
-0.2V,
I
CC1
-
I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
LL
-
LLI
-
CE#
V
CC
-0.2V
*5
-
25℃
SL
Standby Power
or CE2
0.2V
I
SB1
*5
SLI
Supply Current
-
Others at 0.2V or
40℃
V
CC
- 0.2V
SL
-
SLI
-
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
TYP.
3.0
-
-
-
-
2.7
-
12
10
7
1
1
1
0.8
1
0.8
0.8
*4
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
80
60
50
10
15
30
2
2
7
10
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
4

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