BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
SOD-323F
Features
Fast switching device(T
rr
<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish
Pb free version, RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : Flat lead SOD-323F small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Polarity : Indicated by cathode band
Weight : 4.6±0.5 mg
Marking Code : W2
Dimensions
A
B
C
D
E
F
Unit (mm)
Min
1.15
2.30
0.25
1.60
0.80
0.05
Max
1.40
2.80
0.40
1.80
1.10
0.15
Unit (inch)
Min
Max
0.045 0.055
0.091 0.106
0.010 0.016
0.063 0.071
0.031 0.043
0.002 0.006
Ordering Information
Part No.
BAS316WS RR
BAS316WS RRG
Package
SOD-323F
SOD-323F
Packing
3Kpcs / 7" Reel
3Kpcs / 7" Reel
Pin Configuration
Suggested PAD Layout
X
1
Y
(2X)
X
(2X)
Dimensions
X
Unit (mm)
0.710
2.900
0.403
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
X
1
Y
Maximum Ratings
Type Number
Power Dissipation
Average Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width= 1 usec
Pulse Width= 1 msec
Operating Junction Temperature
Storage Temperature Range
T
J
T
STG
I
FSM
4.0
1.0
150
-65 to + 150
°C
°C
A
Symbol
P
D
I
O
Value
200
250
Units
mW
mA
Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary despending on application.
Version : A10
BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
100 uA
1.0 mA
10 mA
50 mA
150 mA
75 V
25 V
0, f=1.0MHz
I
F
=I
R
=
10mA, Irr=0.1 x I
R
,
R
Symbol
I=
I
F
=
I
F
=
I
F
=
I
F
=
V
R
=
V
R
=
V
R
=
V
(BR)
Min
100
-
-
-
-
-
-
-
Max
-
0.715
0.855
1.000
1.250
1.00
0.03
1.5
4.0
Units
V
Forward Voltage
V
F
V
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
J
Trr
uA
pF
ns
Tape & Reel specification
TSC label
Top Cover Tape
Item
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
K
D
A
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
2.40 Max.
1.50 +0.10
178 ± 1
50 Min.
13.0 ± 0.5
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.10
0.6 Max.
8.30 Max.
14.4 Max.
Carieer Tape
Any Additional Label (If Required)
W1
A
ersion
: A10
D2
D1
Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.
Version : A10
BAS316WS
200mW, High-speed switching SMD Diode
Small Signal Diode
Rating and Characteristic Curves
FIG 1 Typical Forward Characteristics
Instantaneous Forward Current (mA)
300
275
250
225
200
175
150
125
100
75
50
25
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0
20
40
60
80
100 120 140 160 180 200
o
100
FIG 2 Reverse Current as a function of junction
temperature.
Ta=25°C
Reverse Current (uA)
10
VR=75V
VR=75V
max
1
VR=25V
typ
typ
0.1
Instantaneous Forward Voltage (V)
Junction Temperature ( C)
FIG 4 Typical Junction Capacitance
0.8
FIG 3 Admissible Power Dissipation Curve
250
Ta=25°C
Power Dissipation (mW)
200
Junction Capacitance (pF)
0
25
50
75
100
125
150
175
0.6
150
0.4
100
50
0.2
0
0
0
2
4
6
8
10
12
14
16
Ambient Temperature (°C)
Reverse Voltage (V)
Version : A10
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