Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV116, BYV116B series
SYMBOL
QUICK REFERENCE DATA
V
R
= 20 V/ 25 V
I
O(AV)
= 10 A
V
F
≤
0.54 V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package.
The BYV116B series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYV118-
BYV116B-
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
≤
124 ˚C
square wave;
δ
= 0.5; T
mb
≤
123 ˚C
square wave;
δ
= 0.5; T
mb
≤
123 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
20
20
20
20
20
10
10
50
55
1
150
175
MAX.
25
25
25
25
25
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 of the SOT404 package.
March 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
BYV116, BYV116B series
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
4
3.5
-
-
K/W
K/W
K/W
K/W
per diode
both diodes
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 5 A; T
j
= 125˚C
I
F
= 10 A; T
j
= 125˚C
I
F
= 5 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.47
0.66
0.58
0.05
5
160
0.54
0.77
0.64
3
10
-
V
V
V
mA
mA
pF
March 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV116, BYV116B series
5
4
3
2
Forward dissipation, PF (W)
Vo = 0.31 V
Rs = 0.046 Ohms
BYV116
Tmb(max) / C
D = 1.0
130
134
100mA
IR / A
150 C
BYV116
10mA
125 C
1mA
100 C
75 C
0.5
0.1
0.2
138
142
I
t
p
t
p
D=
T
100uA
50 C
1
T
t
146
150
8
10uA Tj = 25 C
0
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
1uA
0
5
10
VR / V
15
20
25
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
5
4
3
2
1
0
Forward dissipation, PF (W)
Vo = 0.31 V
Rs = 0.046 Ohms
BYV116
Tmb(max) / C
130
1000
Cd / pF
BYV116
4
2.8
2.2
1.9
a = 1.57 134
138
100
142
146
150
5
0
1
2
3
4
Average forward current, IF(AV) (A)
10
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
10
IF / A
Tj = 25 C
Tj = 125 C
BYV116
10
Transient thermal impedance, Zth j-mb (K/W)
8
1
6
typ
max
0.1
4
0.01
2
P
D
t
p
D=
t
p
T
t
0
0
0.2
0.4
VF / V
0.6
0.8
1
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR325CTD
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
March 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
BYV116, BYV116B series
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.8. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
March 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV116, BYV116B series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.9. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
March 1998
5
Rev 1.000
Embedded System
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