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BSS192,115

Description
mosfet tape-7 mosfet
CategoryDiscrete semiconductor    The transistor   
File Size61KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSS192,115 Overview

mosfet tape-7 mosfet

BSS192,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Manufacturer packaging codeSOT89
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresCMOS COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage240 V
Maximum drain current (Abs) (ID)0.2 A
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)15 pF
JEDEC-95 codeTO-243AA
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS192
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 20
2002 May 22

BSS192,115 Related Products

BSS192,115 BSS192,135
Description mosfet tape-7 mosfet mosFET tape13 pwr-mos
Brand Name NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOT-89 SOT-89
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Manufacturer packaging code SOT89 SOT89
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features CMOS COMPATIBLE CMOS COMPATIBLE
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 240 V 240 V
Maximum drain current (Abs) (ID) 0.2 A 0.2 A
Maximum drain current (ID) 0.2 A 0.2 A
Maximum drain-source on-resistance 12 Ω 12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 15 pF 15 pF
JEDEC-95 code TO-243AA TO-243AA
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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