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BSS159N H6906

Description
mosFET N-kanal small signal mos
Categorysemiconductor    Discrete semiconductor   
File Size195KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
Download Datasheet Parametric Compare View All

BSS159N H6906 Overview

mosFET N-kanal small signal mos

BSS159N H6906 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre230 mA
Rds On - Drain-Source Resistance3.5 Ohms
ConfiguratiSingle
Qg - Gate Charge2.2 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati360 mW
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingReel
Channel ModeDepleti
Fall Time9 ns
Forward Transconductance - Mi0.19 S
Minimum Operating Temperature- 55 C
Rise Time2.9 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time9 ns
BSS159N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Qualified according to AEC Q101
• 100% lead-free; Halogen-free; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
DSS,min
60
8
0.13
V
Ω
A
PG-SOT-23
3
1
2
Type
BSS159N
BSS159N
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Halogen-free
Yes
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
H6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
Marking
SGs
SGs
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=60 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.23
0.18
0.92
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
JESD22-A114 -HBM
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
0(<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
see table on next page and diagram 11
Rev. 2.2
page 1
2009-07-29

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