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BSC059N04LS G

Description
mosfet optimos 3 pwr trans 40v 73a
Categorysemiconductor    Discrete semiconductor   
File Size460KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSC059N04LS G Overview

mosfet optimos 3 pwr trans 40v 73a

BSC059N04LS G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre16 A
Rds On - Drain-Source Resistance5.9 mOhms
ConfiguratiSingle Quad Drain Triple Source
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati2.5 W
Mounting StyleSMD/SMT
Package / CaseTDSON-8
PackagingReel
Channel ModeEnhanceme
Fall Time3.8 ns
Minimum Operating Temperature- 55 C
Rise Time3.4 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time23 ns
BSC059N04LS G
OptiMOS™3
Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
Product Summary
V
DS
R
DS(on),max
I
D
40
5.9
73
PG-TDSON-8
V
mW
A
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC059N04LS G
Package
PG-TDSON-8
Marking
059N04LS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
73
46
62
39
Unit
A
16
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
W
292
50
25
±20
mJ
V
J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17

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BSC059N04LS G BSC059N04LSG
Description mosfet optimos 3 pwr trans 40v 73a Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 2V @ 23uA Drain-source on-resistance: 5.9mΩ @ 50A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: N-channel N-channel, 40V, 16A, 5.9mΩ@10V
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