BUK9Y41-80E,115 datasheet, PDF

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BUK9Y41-80E,115: DescriptionMOSfet N-channel 80 V 45 mo fet; Categorysemiconductor Discrete semiconductor; File Size345KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK9Y41-80E,115 Overview

MOSfet N-channel 80 V 45 mo fet

BUK9Y41-80E,115 Parametric

Parameter Name	Attribute value
Manufacture	NXP
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	80 V
Vgs - Gate-Source Breakdown Voltage	10 V
Id - Continuous Drain Curre	24 A
Rds On - Drain-Source Resistance	35.7 mOhms
Configurati	Triple Common Source
Vgs th - Gate-Source Threshold Voltage	1.7 V
Qg - Gate Charge	11.9 nC
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipati	64 W
Mounting Style	SMD/SMT
Package / Case	LFPAK56-4
Packaging	Reel
Fall Time	10.5 ns
Minimum Operating Temperature	- 55 C
Rise Time	11.2 ns
Factory Pack Quantity	1500
Typical Turn-Off Delay Time	16.1 ns

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BUK9Y41-80E

8 May 2013

N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56

Product data sheet

1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

•

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True logic level gate with V

GS(th)

rating of greater than 0.5 V at 175 °C

3. Applications

•

12 V, 24 V and 48 V Automotive systems

Motors, lamps and solenoid control

Transmission control

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 5 V; T

= 25 °C;

Fig. 1

= 25 °C;

Fig. 2

= 5 V; I

= 5 A; T

= 25 °C;

Fig. 11

Min

Typ

Max

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

35.7

mΩ

Dynamic characteristics

= 5 V; I

= 5 A; V

= 64 V;

= 25 °C;

Fig. 13; Fig. 14

4.3

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