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BF 1005 E6327

Description
transistors RF mosfet silicon N-channel mosfet tetrode
Categorysemiconductor    Discrete semiconductor   
File Size80KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BF 1005 E6327 Overview

transistors RF mosfet silicon N-channel mosfet tetrode

BF 1005 E6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle Dual Gate
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage8 V
Id - Continuous Drain Curre0.025 A
Vgs - Gate-Source Breakdown Voltage+/- 13 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-143
PackagingReel
Minimum Operating Temperature- 55 C
Pd - Power Dissipati200 mW
Factory Pack Quantity3000
BF1005...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1 GHz
Operating voltage 5V
Integrated biasing network
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
Drain
AGC
RF
Input
G2
G1
RF Output
+ DC
GND
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BF1005
BF1005R
Package
SOT143
SOT143R
1=S
1=D
2=D
2=S
Pin Configuration
3=G2
3=G1
4=G1
4=G2
-
-
-
-
Marking
MZs
MZs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
S
76 °C
Storage temperature
Channel temperature
1
Pb-containing
Symbol
V
DS
I
D
±I
G1/2SM
+V
G1SE
P
tot
T
stg
T
ch
Value
8
25
10
3
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
package may be available upon special request
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
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