PSMN6R0-25YLB,115 datasheet, PDF

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PSMN6R0-25YLB,115: Descriptionmosfet N-CH 25 V 6.1 mohms logic level mosfet; Categorysemiconductor Discrete semiconductor; File Size308KB，16 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PSMN6R0-25YLB,115 Overview

mosfet N-CH 25 V 6.1 mohms logic level mosfet

PSMN6R0-25YLB,115 Parametric

Parameter Name	Attribute value
Manufacture	NXP
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Vgs - Gate-Source Breakdown Voltage	20 V
Id - Continuous Drain Curre	73 A
Rds On - Drain-Source Resistance	6.1 mOhms
Configurati	Single Triple Source
Qg - Gate Charge	9 nC
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipati	58 W
Mounting Style	SMD/SMT
Package / Case	LFPAK-4
Packaging	Reel
Minimum Operating Temperature	- 55 C
Factory Pack Quantity	1500

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PSMN6R0-25YLB

N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using

NextPower technology

Rev. 2 — 31 October 2011

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits



High reliability Power SO8 package,

qualified to 175°C



Low parasitic inductance and

resistance



Optimised for 4.5V Gate drive utilising

NextPower Superjunction technology



Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

1.3 Applications



DC-to-DC converters



Load switching



Synchronous buck regulator

1.4 Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state resistance

= 4.5 V; I

= 20 A; T

= 25 °C;

see

Figure 12

= 10 V; I

= 20 A; T

= 25 °C;

see

Figure 12

Dynamic characteristics

G(tot)

gate-drain charge

total gate charge

= 4.5 V; I

= 20 A; V

= 12 V;

see

Figure 14;

see

Figure 15

2.6

Conditions

25 °C

≤

175 °C

= 25 °C; V

= 10 V;

see

Figure 1

= 25 °C; see

Figure 2

Min

-55

Typ

6.7

5.1

Max

175

7.9

6.1

Unit

°C

mΩ

Static characteristics

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