ESD8V0L...
Low Capacitance TVS Diode
•
ESD / transient protection of high-speed
data lines in 3.3 / 5 / 12 V applications
according to:
IEC61000-4-2 (ESD): up to
±
25 KV (contact)
IEC61000-4-4 (EFT): 40 A (5/50 ns)
IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)
•
Smallest form factor down to 1.0 x 0.6 x 0.4 mm
•
Max. working voltage: -8 / +14 V or +8 / -14 V
•
Ultra low dynamic resistance down to
0.3
Ω
•
Very low capacitance down to 2 pF
•
Very low reverse current < 1 nA typ.
•
Very low series inductance down to 0.4 nH
•
Pb-free (RoHS compliant) package
Applications
•
USB 2.0, 10/100 Ethernet, Firewire, DVI
•
Mobile communication
•
Consumer products (STB, MP3, DVD, DSC...)
•
LCD displays, camera
•
Notebooks and destop computers, peripherals
ESD8V0L1B-02EL
ESD8V0L1B-02LRH
ESD8V0L2B-03L
D1
1
1
2
3
2
D2
Type
ESD8V0L1B-02EL
ESD8V0L1B-02LRH
ESD8V0L2B-03L
Package
TSLP-2-18
TSLP-2-17
TSLP-3-1
Configuration
1 channel, bi-directional
1 channel, bi-directional
2 channels, bi-directional
Marking
E7
B3
B3
1
2013-02-06
ESD8V0L...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
V
ESD
Value
Unit
ESD contact discharge
1)
ESD8V0L1B...
ESD8V0L2B..., between all pins
Peak pulse current (
t
p
= 8 / 20 µs)
2)
ESD8V0L1B...
ESD8V0L2B...
Operating temperature range
Storage temperature
1
V
2
I
kV
25
15
I
pp
A
2.5
1
T
op
T
stg
-55...125
-65...150
°C
ESD
according to IEC61000-4-2
pp
according to IEC61000-4-5
2
2013-02-06
ESD8V0L...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Characteristics
Symbol
min.
Values
typ.
max.
Unit
Reverse working voltage
Breakdown voltage
I
(BR)
= 1 mA, from pin 2 to 1, ESD8V0L1B...
I
(BR)
= 1 mA, from pin 1 to 2, ESD8V0L1B...
I
(BR)
= 1 mA, from pin 1/2 to 3, ESD8V0L2B...
I
(BR)
= 1 mA, from pin 3 to 1/2, ESD8V0L2B...
I
(BR)
= 1 mA, from pin 1 to 2, ESD8V0L2B...
V
RWM
V
(BR)
-8
14.5
8.5
14.5
8.5
23
-
-
-
-
-
-
<1
14
-
-
-
-
-
50
V
Reverse current
V
R
= 3 V, between all pins
I
R
V
CL
-
nA
V
Clamping voltage (contact)
1)
V
ESD
= +15 kV , from pin 1 to 2, ESD8V0L1B...
V
ESD
= -15 kV, from pin 1 to 2, ESD8V0L1B...
V
ESD
= +15 kV , from pin 1/2 to 3, ESD8V0L2B...
V
ESD
= -15 kV , from pin 1/2 to 3, ESD8V0L2B...
-
-
-
-
C
T
21
16
26
20
8.5
4
2
0.3
0.6
-
-
-
-
pF
13
7
4
Ω
Line capacitance
2)
V
R
= 0 V,
f
= 1 MHz, ESD8V0L1B...
V
R
= 0 V,
f
= 1 MHz, ESD8V0L2B...,
-
-
-
R
D
from pin 1/2 to 3
from pin 1 to 2, pin 3 is not connected
Dynamic resistance ( tp=30ns )
ESD8V0L1B...
ESD8V0L2B...
1
V
-
-
-
-
ESD
according to IEC61000-4-2
2
Total
capacitance line to ground
3
2013-02-06
ESD8V0L...
Reverse current
I
R
=
ƒ
(
V
R
)
T
A
= Parameter
10
1
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
10
pF
nA
TA = 85°C
8
7
ESD8V0L1B...
ESD8V0L2B..., pins 1/2 to 3
ESD8V0L2B..., pins 1 to 2
10
0
C
T
TA = 25°C
I
R
6
5
4
10
-1
3
2
1
10
-2
0
0
0
2
4
6
8
10
V
14
5
V
15
V
R
V
R
4
2013-02-06
ESD8V0L...
Application example
ESD8V0L2B...
2 channels, bi-directional
Connector
2 protected signal lines, level up to
-8V/+14V
I/O
I/O
ESD sensitive
device
1
2
The protection diode should be placed very
close to the location where the ESD or
other transients can occur to keep loops
and inductances as small as possible.
Pin 3 should be connected directly to a
ground plane on the board.
3
Application example
ESD8V0L2B...
1 high-speed channel, bi-directional
Connector
Protected high-speed signal line, level up to
±22V (bi-directional)
I/O
ESD sensitive
device
2
3
1
Pin 1 (or pin 2) should be
connected directly to a
ground plane on the board.
Pin 3 is not connected.
Application example
ESD8V0L1B...
1 channel, bi-directional
Connector
Protected signal line, level up to
-8/+14V or +8/-14 V
I/O
ESD sensitive
device
2
Pin 1 (or Pin 2) should be connected directly to a
ground plane on the board.
1
5
2013-02-06
stm32/stm8
京公网安备 11010802033920号
EEWORLD
