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BYV26D

Description
1 A, 800 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BYV26D Overview

1 A, 800 V, SILICON, SIGNAL DIODE

BYV26D AND BYV26E
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage -
800 to 1000 Volts
*
D
DO-204AP
Forward Current -
1.0 Ampere
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Superfast recovery times for high efficiency
Low forward voltage, high current capability
Capable of meeting environmental standards of
MIL-S-19500
Hermetically sealed package
Low Leakage
High surge capability
Specified reverse surge capability
High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
FEATURES
P
A
T
E
N
T
E
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-204AP solid glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.02 ounce, 0.56 gram
Dimensions in inches and (millimeters)
*
Brazed-lead assembly is covered by Patent No. 3,930,306
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BYV26D
BYV26E
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Minimum avalanche breakdown voltage at 100µA
Maximum average forward rectified current
0.375" (9.5mm) lead length
(SEE FIG. 1)
Peak forward surge current 10ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage at 1.0A
T
J
=25°C
T
J
=175°C
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Non repetitive peak reverse energy
(NOTE 2)
Typical junction capacitance
(NOTE 3)
Typical thermal resistance
(NOTE 4)
(NOTE 5)
V
RRM
V
RMS
V
DC
V
BR
I
(AV)
I
FSM
V
F
800
560
800
900
1.0
30.0
2.50
1.30
5.0
150.0
75.0
10.0
15.0
70.0
16.0
1000
700
1000
1100
Volts
Volts
Volts
Volts
Amp
Amps
Volts
T
A
=25°C
T
A
=165°C
I
R
t
rr
E
RSM
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
µA
ns
mj
pF
°C/W
°C
Operating junction and storage temperature range
-65 to +175
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Peak reverse energy measured at I
R
=400mA, T
J
=T
J
max. on inductive load, t=20µs
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads
(5) Thermal resistance from junction to lead at 0.375” (9.5mm) lead length with both leads attached to heatsink
4/98

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