BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
DS
V
GS
I
D
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V;
T
amb
= 25 °C
V
GS
= 10 V;
I
D
= 320 mA; T
j
= 25 °C
[1]
Quick reference data
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
-
Typ
-
-
-
Max
60
20
320
Unit
V
V
mA
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
-
1
1.6
Ω
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
NXP Semiconductors
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
1
2
3
G1
G2
Simplified outline
6
5
4
Graphic symbol
D1
D2
SOT363 (TSSOP6)
S1
S2
017aaa256
3. Ordering information
Table 3.
Ordering information
Package
Name
BSS138BKS
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
LG%
Type number
BSS138BKS
[1]
% = placeholder for manufacturing site code.
BSS138BKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
2 of 17
NXP Semiconductors
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
Per transistor
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
Per device
P
tot
T
j
T
amb
T
stg
I
S
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
Limiting values
Parameter
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Max
60
20
320
210
1.2
280
320
990
445
150
150
150
320
1500
Unit
V
V
mA
mA
A
mW
mW
mW
mW
°C
°C
°C
mA
V
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
T
amb
= 25 °C
-
-55
-55
-65
Source-drain diode
T
amb
= 25 °C
HBM
[1]
-
-
ESD maximum rating
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
BSS138BKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
3 of 17
NXP Semiconductors
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
120
P
der
(%)
80
001aao121
120
I
der
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
T
j
(°C)
175
0
-75
-25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
10
I
D
(A)
1
Fig 2.
Normalized continuous drain current as a
function of junction temperature
aaa-000172
(1)
10
-1
(2)
10
-2
(3)
(4)
(5)
10
-3
10
-1
1
10
V
DS
(V)
10
2
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
BSS138BKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
4 of 17
NXP Semiconductors
BSS138BKS
60 V, 320 mA dual N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to solder point
thermal resistance from junction to ambient
in free air
[1]
Conditions
in free air
[1]
[2]
Min
-
-
-
-
Typ
390
340
-
-
Max
445
390
130
300
Unit
K/W
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.25
0.1
0.2
0.05
017aaa034
0
10
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BSS138BKS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 12 August 2011
5 of 17
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