Type
BSS127
SIPMOS
®
Small-Signal-Transistor
Features
• n-channel
• enhancement mode
• Logic level (4.5V rated)
• dv /dt rated
• 100%lead-free; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
600
500
0.021
V
Ω
A
PG-SOT-23
Type
BSS127
Package
PG-SOT-23
Pb-free
Yes
Halogen-free
Yes
Tape and Reel Information
H6327: 3000PCS/reel
Marking
SIs
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.021 A,
V
DS
=480 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.021
0.017
0.09
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD class (JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
±20
0 (<250)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
0.50
-55 ... 150
55/150/56
W
°C
Rev. 2.01
page 1
2010-05-07
BSS127
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R
thJA
Values
typ.
max.
Unit
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
I
D (off)
V
DS
=V
GS
,
I
D
=8 µA
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=0.016 A
V
GS
=10 V,
I
D
=0.016 A
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.01 A
600
1.4
-
-
2.0
-
-
2.6
0.1
µA
V
-
-
-
-
10
330
10
100
600
nA
Ω
-
310
500
Transconductance
g
fs
0.007
0.015
-
S
Rev. 2.01
page 2
2010-05-07
BSS127
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
A
=25 °C
V
GS
=0 V,
I
F
=0.016 A,
T
j
=25 °C
V
R
=300 V,
I
F
=0.016 A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.82
160
13.2
0.016
0.09
1.2
240
19.8
V
ns
nC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=300 V,
I
D
=0.01 A,
V
GS
=0 to 10 V
-
-
-
-
0.07
0.31
0.65
3.56
0.10
0.5
1.0
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=300 V,
V
GS
=10 V,
I
D
=0.01 A,
R
G
=6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
21
2.4
1.0
6.1
9.7
14
115
28
3
1.5
19.0
14.5
21
170
ns
pF
Values
typ.
max.
Unit
Rev. 2.01
page 3
2010-05-07
BSS127
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10
V
0.6
0.03
0.5
0.025
0.4
0.02
P
tot
[W]
0.3
I
D
[A]
0.015
0.2
0.01
0.1
0.005
0
0
40
80
120
160
0
0
40
80
120
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
-1
10 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
limited by on-state
resistance
100 µs
1 ms
10 ms
100 ms
0.5
10
2
0.2
0.1
10
-2
Z
thJA
[K/W]
0.05
0.02
0.01
single pulse
I
D
[A]
10
1
DC
10
-3
10
0
10
-1
10
-4
10
-5
10
0
10
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
V
DS
[V]
10
2
10
3
t
p
[s]
Rev. 2.01
page 4
2010-05-07
BSS127
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
0.03
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
1000
2.6 V
3V
5V
3.2 V
3.6 V
4V
3.8 V
0.025
800
4V
0.02
0.015
3.6 V
R
DS(on)
[
Ω
]
3.8 V
600
I
D
[A]
400
5V
10 V
0.01
3.2 V
0.005
200
3V
2.6 V
0
0
2
4
6
8
10
0
0
0.005
0.01
0.015
0.02
0.025
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
0.025
0.025
0.02
0.02
0.015
0.015
0.01
g
fs
[S]
0.01
0.005
0
0
1
2
3
4
0
0.000
0.005
0.010
0.015
0.020
I
D
[A]
0.005
V
GS
[V]
I
D
[A]
Rev. 2.01
page 5
2010-05-07
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